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NXP Semiconductors N.V.
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Part No. |
BUK9E04-30B
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OCR Text |
...v i d drain current v gs =5v; t mb =25c; see figure 1 ; see figure 3 [1] --75a p tot total power dissipation t mb = 25 c; see figure 2 -...6 10 ?1 1 10 ?2 10 ?3 10 ?5 10 ?4 10 ?1 10 ?2 1 z th(j-mb) (k/w) 10 ?3 single shot 0.2 0.1 0.05 0.02... |
Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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File Size |
169.54K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
PSMN4R1-30YLC
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OCR Text |
... c - - 30 v i d drain current t mb =25c; v gs =10v; see figure 1 --92a p tot total power dissipation t mb = 25 c; see figure 2 --67w t j...6. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ ... |
Description |
N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
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File Size |
305.41K /
15 Page |
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it Online |
Download Datasheet
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Price and Availability
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