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  K6R1016V1C-C12 Datasheet PDF File

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    SANYO[Sanyo Semicon Device]
Part No. FC128
Description NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

File Size 36.73K  /  2 Page

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    SANYO[Sanyo Semicon Device]
Part No. FC129
Description PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

File Size 36.26K  /  2 Page

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    IMP Inc
IMP[IMP, Inc]
IMP Inc
Part No. C1210
Description Process C1210 CMOS 1.2mm Zero Threshold Devices

File Size 33.75K  /  4 Page

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    GPD Optoelectronic Devices
Part No. AC128
Description Germanium Small Signal Transistors

File Size 567.29K  /  4 Page

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    Motorola
Part No. C122N
Description Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 800 V.

File Size 118.36K  /  3 Page

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    General Electric Solid State
Part No. C122D
Description 8A silicon controlled rectifier. Vrrom 400V.

File Size 211.34K  /  4 Page

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    HC12G-2P

JL World Company Limited.
Part No. HC12G-2P
Description Electro-Magnetic Sound Generators

File Size 56.80K  /  1 Page

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    SOLITRON DEVICES INC
Part No. UC120
Description N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72

File Size 49.65K  /  1 Page

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    C1203

General Cable Technologies Corporation
Part No. C1203
Description CONTROL CABLE

File Size 67.64K  /  1 Page

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    Renesas
Part No. C1213
Description Search --To 2SC1213

File Size 53.62K  /  5 Page

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Part: K6R1016V1C-TC12
Maker: SAMSUNG(三星)
Pack: TSSOP44
Stock: 100
Unit price for :
    50: $3.60
  100: $3.42
1000: $3.24

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