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  h.q. Datasheet PDF File

For h.q. Found Datasheets File :: 62127    Search Time::2.437ms    
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    TPC8A07-H

Toshiba Semiconductor
Part No. TPC8A07-H
OCR Text h 2009-07-21 1 toshiba field effect transistor wi th built-in schottky barrier diode silicon n-channel mos type (u-mos v -h) tpc8a07-h...q sw = 3.4 nc (typ.) (q2) q sw = 3.6 nc (typ.) ? low drain-source on-resistance: (q1) r ds (on...
Description High-Efficiency DC/DC Converter Applications

File Size 290.88K  /  12 Page

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    Mitsubishi Electric Corporation
Part No. QM50DY-H
OCR Text ...bishi transistor modules qm50dy-h medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application a...q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff...
Description MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 76.98K  /  5 Page

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    AP03N70HJ-H

Advanced Power Electronics Corp.
Part No. AP03N70HJ-H
OCR Text ...t product -55 to 150 ap03n70h/j-h 2.5 1.6 storage temperature range 8 54.3 linear derating factor 0.44 200812114 parameter 2.5 parameter -55...q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1a v ds =480v 1 100 10000 1 5 ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 98.56K  /  4 Page

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    TPCA8062-H

Toshiba Semiconductor
Part No. TPCA8062-H
OCR Text h 1 mosfets silicon n-channel mos (u-mos -h) tpca8062-h tpca8062-h tpca8062-h tpca8062-h 1. 1. 1. 1. applications applications applicat...q sw = 7.4 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 5.4 m ? (typ.) (v gs = 4.5 v...
Description High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets

File Size 234.53K  /  9 Page

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    Mitsubishi Electric Corporation
Part No. QM15HA-H
OCR Text h medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor...q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff...
Description MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 69.73K  /  5 Page

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    TPC8216-H

Toshiba Semiconductor
Part No. TPC8216-H
OCR Text h 2009-02-23 1 toshiba field effect transistor silicon n-channel mos type (u-mos -h) tpc8216-h high efficiency dc-dc converter ap...q sw = 3.4 nc (typ.) ? low drain-source on-resistance: r ds (on) = 13.6 m (typ.) ? high for...
Description High-Efficiency DC/DC Converter Applications

File Size 228.97K  /  7 Page

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    TPC8213-H

Toshiba Semiconductor
Part No. TPC8213-H
OCR Text h 2006-11-17 1 toshiba field effect transistor silicon n-channel mos type (ultra-high-speed u-mosiii) tpc8213-h high-efficiency ...q sw = 2.9 nc (typ.) ? low drain-source on-resistance: r ds (on) = 40 m ? (typ.) ? high for...
Description High-Efficiency DC/DC Converter Applications

File Size 343.22K  /  7 Page

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    TPCC8065-H

Toshiba Semiconductor
Part No. TPCC8065-H
OCR Text h 1 mosfets silicon n-channel mos (u-mos -h) tpcc8065-h tpcc8065-h tpcc8065-h tpcc8065-h 1. 1. 1. 1. applications applications applicat...q sw = 4.3 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 11.7 m ? (typ.) (v gs = 4.5 ...
Description MOSFETs Silicon N-Channel MOS (U-MOS-H)

File Size 229.07K  /  9 Page

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    TPCC8061-H

Toshiba Semiconductor
Part No. TPCC8061-H
OCR Text h 1 mosfets silicon n-channel mos (u-mos -h) tpcc8061-h tpcc8061-h tpcc8061-h tpcc8061-h 1. 1. 1. 1. applications applications applicat...q sw = 3.5 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 21 m ? (typ.) (v gs = 4.5 v)...
Description MOSFETs Silicon N-Channel MOS (U-MOS-H)

File Size 233.27K  /  9 Page

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    PG12864LRS-FTA-H

Powertip Technology
Part No. PG12864LRS-FTA-H
OCR Text ...uction code pg12864lrs-fta-h rev.a1 customer approved date: sal...q =0 ) note 1: definition of angles q and ? note 2: definition of viewing angles q 1 and q ...
Description LCD Module

File Size 341.75K  /  34 Page

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