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    APT8014L2LL

ADPOW[Advanced Power Technology]
Part No. APT8014L2LL
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.58K  /  2 Page

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    APT8015JVFR APT8015

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ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 "UL Recognized" File No. E145592 5,262,336 5,528,058
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 "UL Recognized" File No. E145592 5,262,336 5,528,058
Description POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

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    APT8018 APT8018L2VR APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018 APT8018L2VR APT8018JN
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.92K  /  2 Page

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    APT8020B2FLL APT8020LFLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2FLL APT8020LFLL
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.72K  /  2 Page

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    APT8020B2LL APT8020LLL APT6029BLL APT6029SLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2LL APT8020LLL APT6029BLL APT6029SLL
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.99K  /  2 Page

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    APT8024B2FLL APT8024LFLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2FLL APT8024LFLL
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.10K  /  2 Page

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    APT8024B2LL APT8024LLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2LL APT8024LLL
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 57.21K  /  2 Page

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    APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm

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    APT8024B2VR APT8024LVR

ADPOW[Advanced Power Technology]
Part No. APT8024B2VR APT8024LVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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