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Infineon Technologies AG
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| Part No. |
IPB100P03P3L-04 IPP100P03P3L-04 IPI100P03P3L-04
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| OCR Text |
...T j, T stg T C=25C T C=25C I D=-80a Value Unit A
-100
-100 -400 450 -16 / +5 200 -55 ... +175 55/175/56 mJ V W C
Rev. 1.1
page 1...30v, V GS=0V, T j=25C V DS=-30v, V GS=0V, T j=125C2) Gate-source leakage current Drain-source on-sta... |
| Description |
100 A, 30 V, 0.004 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
OptiMOS-P Trench Power-Transistor
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| File Size |
189.55K /
9 Page |
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Infineon
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| Part No. |
SPI80N03S2L-04
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| OCR Text |
...Tjmax2) Reverse diode dv/dt
IS=80a, VDS=24V, di/dt=200A/s, Tjmax=175C
Gate source voltage Power dissipation
TC=25C
Operating and sto...30v, V GS=0V, Tj=25C V DS=30v, V GS=0V, Tj=125C
A 0.01 10 1 1 100 100 nA m 5 4.6 3.6 3.2 6.5 6.2 ... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-262, RDSon = 4.2mOhm, 80a, LL
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| File Size |
526.74K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB80NF03L-04
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| OCR Text |
80a to-262/to-263 stripfet ? power mosfet preliminary data n typical r ds(on) = 0.0035 w n exceptional dv/dt capability n 100% avalanche tes...30v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c80a i d drain curren... |
| Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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| File Size |
125.16K /
7 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB100N06S2L-05 SPP100N06S2L-05
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| OCR Text |
...lanche energy, single pulse
ID=80a, V DD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt
IS=100A, VDS=...30v, VGS =4.5V, ID =100A, RG =1.3
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19 57 170 3.3
25 90 230 -
nC
V(plateau) VDD =44V,... |
| Description |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; LL; 4,7 mOhm
OptiMOS Power-Transistor
Silver Mica Capacitor; Capacitance:15pF; Capacitance Tolerance: /- 5%; Series:CD6; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:4.4mm; Leaded Process Compatible:No RoHS Compliant: No
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| File Size |
310.03K /
8 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SPB80N06S2L-07 SPP80N06S2L-07
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| OCR Text |
... 2* i d * r ds(on)max , i d =80a 52 104 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 3160 4000 pf output capacitance c o...30v, v gs =4.5v, i d =80a, r g =2 ? - 350 520 ns rise time t r - 18 27 turn-off delay time t d (... |
| Description |
OptiMOS Power-Transistor( MOS 型功率晶体管) 的OptiMOS功率晶体管（马鞍山型功率晶体管）
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| File Size |
93.86K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPI80N03S2L-03
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| OCR Text |
...Tjmax2) Reverse diode dv/dt
IS=80a, VDS=24V, di/dt=200A/s, Tjmax=175C
Gate source voltage Power dissipation
TC=25C
Operating and sto...30v, V GS=0V, Tj=25C V DS=30v, V GS=0V, Tj=125C
A 0.01 1 1 1 100 100 nA m 2.9 2.3 2.3 2 3.8 3.5 3... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-262, RDSon = 3.1mOhm, 80a, LL
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| File Size |
523.84K /
8 Page |
View
it Online |
Download Datasheet |
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