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BL50436 2N4126TF IN4003G 25AA1 BP160 1N5244 FDB3508 60F3D
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  4.3-5.5v Datasheet PDF File

For 4.3-5.5v Found Datasheets File :: 225255    Search Time::11.39ms    
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    Advanced Power Electronics
Part No. AP73T03GH-HF-3 AP73T03GJ-HF-3
OCR Text ...0v, i d =30a - - 9 mw v gs =4.5v, i d =20a - - 16 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 42 - s i dss drain-source leakage current v ds =30v, v gs =0v -...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 99.19K  /  6 Page

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    Advanced Power Electronics
Part No. AP40T03GJ-HF-3 AP40T03GH-HF-3
OCR Text ... 62.5 c /w 4 c /w o rdering information ap 4 0t03gh- hf- 3 tr rohs-compliant halogen-free to-252 shipped on tape and reel ( 3000 pcs/reel) ap 4 0t03gj- hf- 3 tb rohs-compli...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 90.77K  /  6 Page

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    Advanced Power Electronics
Part No. AP2607GY-HF-3
OCR Text ... -4 a -20 a p total power dissipation ...3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =2...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 78.01K  /  5 Page

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    Advanced Power Electronics
Part No. AP9576GJ-HF-3
OCR Text ... i -1 4 a drain-source voltage -60 2 0 v at t =...3 62.5 c /w 3.4 c /w o rdering information a...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 95.33K  /  6 Page

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    Advanced Power Electronics
Part No. AP75T10GS-3
OCR Text ... - - 15 mw v g s = 4.5v, i d = 16a - - 21 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 358.35K  /  6 Page

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    FS50SMJ-3 FS50SMJ-3-A8

Renesas Electronics Corporation
Part No. FS50SMJ-3 FS50SMJ-3-A8
OCR Text ...ures * * * * * Drive voltage : 4 V VDSS : 150 V rDS(ON) (max) : 30 m ID : 50 A Integrated Fast Recovery Diode (TYP.) : 125 ns Outline R...3. 4. Gate Drain Source Drain 2 3 3 Applications Motor control, Lamp control, Solenoid ...
Description High-Speed Switching Use Nch Power MOS FET
   High-Speed Switching Use Nch Power MOS FET

File Size 190.08K  /  7 Page

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    Advanced Power Electronics
Part No. AP0904GH-HF-3
OCR Text ... a drain-source voltage 4 0 gate-source voltage 20 v parameter rating symbol value units rthj-c ...3 62.5 c /w parameter rthj-a maximum thermal resistance, junction-ambient 110 c /w...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 85.35K  /  6 Page

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    Guangdong Kexin Industr...
Part No. 2N7002K-3
OCR Text ...notes: 1. device mounted on fr-4 pcb. note: 2. short duration test pulse used to minimize self-heating ef f ect. mark in g 702 . n-cha nne...3 f or w ar d t r ans fer a dm i ttanc e ( note.2) | y f s | v g s = 10v , i d = 200m a...
Description N-Channel Enhancement MOSFET

File Size 1,172.30K  /  3 Page

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    FS30KMJ-3-A8

Renesas Electronics Corporation
Part No. FS30KMJ-3-A8
OCR Text ...es * * * * * * Drive voltage : 4 V VDSS : 150 V rDS(ON) (max) : 86 m ID : 30 A Integrated Fast Recovery Diode (TYP.) : 100 ns Viso : 2000 V...3. Source 1 23 3 Applications Motor control, Lamp control, Solenoid control, DC-DC convert...
Description High-Speed Switching Use Nch Power MOS FET

File Size 168.17K  /  7 Page

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