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					FAIRCHILD[Fairchild Semiconductor]
Part No.	HCPL2503 HCPL-2531 HCPL-2530 HCPL-4502 6N135 6N136 HCPL-2503 HCPL4502 HCPL2530 HCPL2531SV HCPL2531WV HCPL2531SD HCPL2531V HCPL2503S HCPL2503SV HCPL2530S HCPL2530SDV HCPL2530W HCPL2503SDV HCPL2530SV HCPL2530WV HCPL2503V HCPL2531SDV HCPL2503W HCPL2530V HCPL2503WV HCPL4502S HCPL4502SD HCPL4502SDV HCPL4502SV HCPL4502V HCPL4502W HCPL4502WV 6N135W 6N136SDV 6N135SDV 6N135SV 6N135V 6N135WV 6N136W 6N136WV
Description	8-Pin DIP 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler 8-Pin DIP 1mbit/s Dual-Channel High Speed Transistor Output Optocoupler (HCPL-xxxx) HIGH SPEED TRANSISTOR OPTOCOUPLERS
File Size	197.19K / 12 Page	View it Online	Download Datasheet

					Semiconductor Technology, Inc.
Part No.	2N6836 ST535 ST555 ST556 2N6835 ST554 FT401
Description	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 2A I(C) \| TO-3 NPN & PNP High Voltage Silicon High Power Transistors Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:64; Package/Case:44-PLCC; Mounting Type:Surface Mount IC CONFIG DEVICE 212KBIT 20-PLCC TRANSISTOR \| BJT \| NPN \| 450V V(BR)CEO \| 8A I(C) \| TO-204AC IC CONFIG DEVICE 1mbit 20-PLCC
File Size	153.59K / 1 Page	View it Online	Download Datasheet

					Fairchild Semiconductor
Part No.	FOD250LTV FOD050LR1 FOD050LR1V FOD050LV FOD053L FOD053LR1 FOD053LR2V FOD053LV FOD050LR2 FOD050LR2V FOD053LR1V FOD250LS FOD250LSD FOD250LSDV FOD250LSV FOD250LV
Description	8-Pin DIP 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler 3.3V SO-8 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler 3.3V SO8, 1mbit/S HI SPEED DUAL CHANNEL TRANSISTOR - 1kV/us 3.3V
File Size	686.42K / 13 Page	View it Online	Download Datasheet

					Diotec Semiconductor AG DIOTEC[Diotec Semiconductor] Diotec Elektronische
Part No.	ZPD3.0 ZPD5.6 ZPD6.2 ZPD11 ZPD22 ZPD3.6 ZPD2.7 ZPD16 ZPD10 ZPD4.7 ZPD43 ZPD51 ZPD47 ZPD62 ZPD27 ZPD18 ZPD20 ZPD36 ZPD13 ZPD15 ZPD68 ZPD75 ZPD33 ZPD12 ZPD5.1 ZPD8.2 ZPD1 ZPD7.5 ZPD9.1 ZPD24 ZPD3.3 ZPD3.9 ZPD30 ZPD39 ZPD4.3 ZPD56 ZPD6.8
Description	Silicon-Planar-Zener-Diodes 9.05 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 8 pin, DIP, High Speed Transistor Detector, 1mbit/s Optocoupler 22.05 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Silicon-Planar-Zener-Diodes 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:10-6 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:61; Connector Shell Size:24; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Gender:Female
File Size	106.57K / 2 Page	View it Online	Download Datasheet

					Everlight Electronic Co., Ltd. Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
Part No.	6N135M-V HCPL2503W HCPL4502SDV HCPL2531WV HCPL4502V HCPL2530W HCPL2531SDV
Description	8-Pin DIP 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler; Package: DIP-B; No of Pins: 8; Container: Bulk 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 1 Mbps 8-Pin DIP 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler; Package: SMDIP-B; No of Pins: 8; Container: Tape & Reel 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 1 Mbps 8-Pin DIP 1mbit/s Dual-Channel High Speed Transistor Output Optocoupler; Package: DIP-B; No of Pins: 8; Container: Bulk High Speed Transistor Optocouplers High Speed Transistor Optocouplers
File Size	318.45K / 12 Page	View it Online	Download Datasheet

					Glenair, Inc. Square D by Schneider Electric
Part No.	AIDM9 AIDM17J AIDM150 AIDM125 AIDM13G AIDM175 AIDM100 AIDM17G AIDM13J FAIDM11 FAIDM7 AIDM9J AIDM40 FAMDM30 FAMDM500G FAMDM40G FAMDM500J FAMDM60G FAMDM45G FAIDM35G FAIDM50G AIDM30J FAMDM11J FAMDM7J AIDM500G AIDM50J AIDM500J FAMDM30G AIDM150G FAMDM400J FAMDM15J AIDM75 FAMDM80G
Description	2-Channel Differential Input 24-Bit No Latency Delta Sigma ADC; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C .): 1mbit/s; Current Transfer Ratio: 10% (min) (19% (min) for rank O) @I_F(IN)=16mA; Isolation voltage BVs @1minute (min) (V_rms): 5000; Safety Standard 24-Bit µPower No Latency Delta-Sigma ADC in SO-8; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C IF Wave Detection ICs; Application: Cordless Telephone; Operating Voltage: 1.8-5.5V; Package: SSOP16 (0.65); Comments: Mixer/ IF Amp/ Noise Detection ) Typ.: 4.5; Package Type: 2-11D1B ) Typ.: 2.5; Package Type: 2-11D1B IC Output Photocouplers and Photorelays; Features: Buffer logic type(totem pole output); Package: MFSOP6; Surface Mount Type: Y; Number of Pins: 5 IC Output Photocouplers and Photorelays; Features: Inverter logic type(totem pole output); Package: SDIP6; Surface Mount Type: Y; Number of Pins: 6 Serial 12-Bit, 3.5Msps Sampling ADCs with Shutdown; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor MOSFETs - Nch VDSS=30V; Surface Mount Type: N; Package: PW-MOLD; R DS On (Î©): (max 0.12) (max 0.1); I_S (A): (max 5) C-Band Power GaAs IMFETs; Frequency Band (GHz): 3.4-3.8; P1dB (dBm): 42.5; G1dB (dB): 12.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.0-5.3; P1dB (dBm): 42.5; G1dB (dB): 8.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC Logic IC 逻辑IC C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 45.5; G1dB (dB): 8.5; Ids (A) Typ.: 8; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.2; Package Type: 2-16G1B 逻辑IC C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.9-6.4; P1dB (dBm): 38.5; G1dB (dB): 10; Ids (A) Typ.: 1.6; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 3.8; Package Type: 2-11D1B 逻辑IC MOSFETs - Nch VDSS=30V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (Î©): (max 0.02); I_S (A): (max 45)
File Size	76.10K / 1 Page	View it Online	Download Datasheet

					意法半导 EEPROM STMicroelectronics N.V.
Part No.	M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
Description	16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G_UM: 7 dB; G_UM @ f1: 7 dB; I_C: 250 mA; P_tot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - C_d max.: 100@VR=4V pF; Configuration: dual c.a. ; I_F: 1 A; I_FSM max: 10 A; I_R max: 1@VR=25V mA; V_Fmax: 450@IF=1A mV; V_R: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - C_d max.: 10@VR=1V pF; Configuration: single ; I_F max: 200 mA; I_FSM max: 300 A; I_R max: 2.3@VR=25VA; V_Fmax: 400@IF=10mA mV; V_R max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 650 V Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ V_IS: 5 V; I_D: 15 A; Number of pins: 3 ; R_DS(on): 0.125 mOhm; V_DSmax: 50 V Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1mbit/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V HDWR PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
File Size	144.80K / 25 Page	View it Online	Download Datasheet

For 1mbit Found Datasheets File :: 67+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> |

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