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  0.8ua Datasheet PDF File

For 0.8ua Found Datasheets File :: 125    Search Time::2.703ms    
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    NJG1522KB2 NJG1522KB2-C1 NJG1522KB2-C5 NJG1522KB2-C2 NJG1522KB2-C3 NJG1522KB2-C4

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NJRC[New Japan Radio]
New Japan Radio Co., Ltd.
Part No. NJG1522KB2 NJG1522KB2-C1 NJG1522KB2-C5 NJG1522KB2-C2 NJG1522KB2-C3 NJG1522KB2-C4
OCR Text ...ltra thin package +2.5~+6.5V 0.3dB typ. @f=1GHz, Pin=0dBm 0.5dB typ. @f=2GHz, Pin=0dBm 27dB typ. @f=1~2GHz, Pin=0dBm 20dBm max. @f=2GHz, VCTL=2.7V 8uA typ. @f=2GHz, Pin=10dBm FLP6-B2 (Mount Size: 2.1x2.0x0.75mm) nPIN CONFIGURATION KB2...
Description CAP .68UF 100V PEN FILM 3925 10%
SPDT SWITCH GaAs MMIC 单刀双掷开关砷化镓微波单片集成电路

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    MX29LV128DBTC-90Q MX29LV128D MX29LV128DBT2I-90Q MX29LV128DBTI-90Q MX29LV128DTMC-90Q MX29LV128DTT2C-90Q MX29LV128DTT2I-90

Macronix International
Part No. MX29LV128DBTC-90Q MX29LV128D MX29LV128DBT2I-90Q MX29LV128DBTI-90Q MX29LV128DTMC-90Q MX29LV128DTT2C-90Q MX29LV128DTT2I-90Q MX29LV128DTTC-90Q MX29LV128DTTI-90Q
OCR Text ...ngle Power Supply Operation - 3.0 to 3.6 volt for read, erase, and program operations * Latch-up protected to 100mA from -1V to 1.5xVcc * Lo...8uA (typical) * Typical 100,000 erase/program cycle * 10 years data retention SOFTWARE FEATURES * Er...
Description 128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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    MDT10P55B MDT10P55B2P MDT10P55B2S MDT10P55B3P MDT10P55B3S MDT10P55B4P MDT10P55B4S MDT10P55B1P MDT10P55B1S

Micon Design Technology Corporation
Part No. MDT10P55B MDT10P55B2P MDT10P55B2S MDT10P55B3P MDT10P55B3S MDT10P55B4P MDT10P55B4S MDT10P55B1P MDT10P55B1S
OCR Text ...V ~ 5.5 V Operating frequency : 0 ~ 20 MHz The most fast execution time is 200 ns under 20 MHz in all single cycle instructions except the b...8uA 16uA 30uA 42.5uA These parameters are for reference only. (2) XT (C=10p) , WDT - enable 1M...
Description 8-bit micro-controller

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    RB095T-6010

Rohm
Part No. RB095T-6010
OCR Text ... jc Min. - Typ. - Max. 0.58 300 3.0 Unit V A C/W Conditions IF=3A VR=60V junction to case www.rohm.com (c)2010 ROHM Co., L...8uA Ta=25C VR=60V n=30pcs 800 750 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 700 650 600 550 500 450 40...
Description Schottky barrier diode

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    BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
Part No. BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006PI BS62LV4006PI-55 BS62LV4006PIG70 BS62LV4006STCG70 BS62LV4006STIG70 BS62LV4006TIP70 BS62LV4006EC BS62LV4006EC-55 BS62LV4006ECG55 BS62LV4006ECG70 BS62LV4006ECP55 BS62LV4006ECP70 BS62LV4006EI BS62LV4006EI-55 BS62LV4006EI-70 BS62LV4006EIG55 BS62LV4006EIG70 BS62LV4006EIP55 BS62LV4006EIP70 BS62LV4006PC-55 BS62LV4006PC-70 BS62LV4006PCG55 BS62LV4006PCG70 BS62LV4006PCP55 BS62LV4006PCP70 BS62LV4006PI-70 BS62LV4006PIG55 BS62LV4006PIP55 BS62LV4006PIP70 BS62LV4006SC BS62LV4006SC-55 BS62LV4006SC-70 BS62LV4006SCG55 BS62LV4006SCG70 BS62LV4006SCP55 BS62LV4006SCP70 BS62LV4006SI BS62LV4006SI-55 BS62LV4006SI-70 BS62LV4006SIG55 BS62LV4006SIG70 BS62LV4006SIP55 BS62LV4006SIP70 BS62LV4006STC BS62LV4006STC-55 BS62LV4006STC-70 BS62LV4006STCG55 BS62LV4006STCP55 BS62LV4006STCP70 BS62LV4006STI BS62LV4006STI-55 BS62LV4006STI-70 BS62LV4006STIG55 BS62LV4006STIP55 BS62LV4006STIP70 BS62LV4006TC BS62LV4006TC-55 BS62LV4006TC-70 BS62LV4006TCG55 BS62LV4006TCG70 BS62LV4006TCP55 BS62LV4006TCP70 BS62LV4006TI BS62LV4006TI-55 BS62LV4006TI-70 BS62LV4006TIG55 BS62LV4006TIG70 BS62LV4006TIP55
OCR Text ... 25mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 68mA (@55ns) operating current I -grade: 70mA (@55ns)...8uA at TA=70OC. LOW VCC DATA RETENTION WAVEFORM Vcc VIH Vcc ( CE Controlled ) Data Retentio...
Description    Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM

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    RB095B-60 RB095B-6009

Rohm
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Part No. RB095B-60 RB095B-6009
OCR Text 0 3) High reliability CPD 2.3 2.3 (2) Construction Silicon epitaxial planar Structure (1) Taping dimensions(Unit : mm) 4.0...8uA 500 300 PEAK SURGE FORWARD CURRENT : IFSM (A) 250 200 150 AVE:73.0A 100 50 0 1000 PEAK...
Description Schottky Barrier Diode

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    BD616LV4017AC-55 BD616LV4017AC-70 BD616LV4017ACG55 BD616LV4017ACG70 BD616LV4017ACP55 BD616LV4017ACP70 BD616LV4017AI-55 B

Electronic Theatre Controls, Inc.
ETC
BSI
Brilliance Semiconductor
Brilliance Semiconducto...
Part No. BD616LV4017AC-55 BD616LV4017AC-70 BD616LV4017ACG55 BD616LV4017ACG70 BD616LV4017ACP55 BD616LV4017ACP70 BD616LV4017AI-55 BD616LV4017AI-70 BD616LV4017AIG55 BD616LV4017AIG70 BD616LV4017AIP55 BD616LV4017AIP70 BD616LV4017DC-55 BD616LV4017DC-70 BD616LV4017DCG55 BD616LV4017DCG70 BD616LV4017DCP55 BD616LV4017DCP70 BD616LV4017DI-55 BD616LV4017DI-70 BD616LV4017DIG55 BD616LV4017DIG70 BD616LV4017DIP55 BD616LV4017DIP70 BD616LV4017EC-55 BD616LV4017EC-70 BD616LV4017ECG55 BD616LV4017ECG70 BD616LV4017ECP55 BD616LV4017ECP70 BD616LV4017EI-55 BD616LV4017EI-70 BD616LV4017EIG55 BD616LV4017EIG70 BD616LV4017EIP55 BD616LV4017EIP70 BS616LV4017 BS616LV4017AC BS616LV4017AI BS616LV4017DC BS616LV4017DI BS616LV4017EC BS616LV4017EI
OCR Text ... 22mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 63mA (@55ns) operating current I-grade: 65mA (@55ns) ...8uA at TA=70OC. LOW VCC DATA RETENTION WAVEFORM ( CE Controlled ) Data Retention Mode Vcc VI...
Description    Very Low Power/Voltage CMOS SRAM 256K X 16 bit
D-Subminiature Connector; Gender:Male; No. of Contacts:15; Contact Termination:IDC; D Sub Shell Size:DB15; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 非常低功电压CMOS SRAM56 × 16
CONNECTOR ELECTRICAL 非常低功电压CMOS SRAM56 × 16
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
D-Subminiature Connector; Gender:Male; No. of Contacts:25; Contact Termination:IDC; D Sub Shell Size:DB25; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
D-Subminiature Connector; Gender:Male; No. of Contacts:9; Contact Termination:IDC; D Sub Shell Size:DB9; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
Asynchronous 4M(256Kx16) bits Static RAM

File Size 263.06K  /  10 Page

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    RSX501LA-2009 RSX501LA-20

Rohm
Part No. RSX501LA-2009 RSX501LA-20
OCR Text ...Land size figure (Unit : mm) 2.0 1.4 Structure Silicon epitaxial planar ROHM : PMD PMD Structure Taping dimensions (Unit : mm)...8uA Ta=25 VR=20V n=30pcs 1050 1040 1030 Ta=25 f=1MHz VR=0V n=10pcs CAPACITANCE BETWEEN TERMINA...
Description Schottky barrier diode

File Size 265.98K  /  4 Page

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For 0.8ua Found Datasheets File :: 125    Search Time::2.703ms    
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