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  0.0017 Datasheet PDF File

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    2SC3357 2SC3357-T2 2SC3357RF 2SC3357-T1

NEC Corp.
Part No. 2SC3357 2SC3357-T2 2SC3357RF 2SC3357-T1
OCR Text ... and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz * Large PT in Small Package PT : 2 W with 16 cm2 x 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 ...
Description For amplify high frequency and low noise.
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits

File Size 75.76K  /  8 Page

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    2SC4225 2SC4225R2 2SC4225R3

NEC Corp.
NEC[NEC]
Part No. 2SC4225 2SC4225R2 2SC4225R3
OCR Text ...IMENSIONS in millimeters 2.1 0.1 1.25 0.1 FEATURES 2.0 0.2 0.3 +0.1 -0 * Low Noise and High Gain NF = 1.5 dB TYP. S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz at VCE = 10 V, IC = 20 mA, f = 1 GHz (reference value) ...
Description SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

File Size 39.87K  /  8 Page

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    2SC4445

SANKEN[Sanken electric]
Part No. 2SC4445
OCR Text ...ternal Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0....
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 24.35K  /  1 Page

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    2SC5244A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5244A
OCR Text ...5 Unit: mm 3.30.2 5.00.3 3.0 6.0 s Features q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC5244 2SC5244A 2SC5244 Symbol VCBO VCES VEBO ICP IC PC Tj Tstg 20...
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output)

File Size 44.33K  /  2 Page

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    2SC5584

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5584
OCR Text 0) (6.0) (2.0) (4.0) 20.00.5 3.30.2 5.00.3 (3.0) I Features * High breakdown voltage, and high reliability through the use of a glass passivation layer * High-speed switching * Wide area of safe operation (ASO) 26.00.5 (3.0) ...
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output)

File Size 43.98K  /  1 Page

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    2SD1276 2SD1276A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1276 2SD1276A
OCR Text 0.70.1 For power amplification Complementary to 2SB950 and 2SB950A Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 4.20.2 q q 14.00.5 s Absolute Maximum Ratings Parameter...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 60.75K  /  2 Page

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    2SD1899 D1899 2SD1899-Z

TEL[TRANSYS Electronics Limited]
Part No. 2SD1899 D1899 2SD1899-Z
OCR Text ...P MAX UNIT V V V Ic=100A, IE=0 Ic=1mA, IB=0 IE=100A,IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=2V, IC=200mA VCE=2V, IC=600mA VCE=2V, IC=2A IC=1.5A, IB=150mA IC=1.5A, IB=150mA VCE=5V, IC=1.5A VCB=10V, IE=0, f=1MHz 60 60 7 10 10 60 100 50 0.25...
Description TO-252 Plastic-Encapsulated Transistors 52塑料封装晶体

File Size 53.06K  /  1 Page

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    2SK1358

TOSHIBA[Toshiba Semiconductor]
Part No. 2SK1358
OCR Text ...L Rth(ch-c) Rth(ch-a) MAX. 0.833 50 UNIT C/W C/W This transistor is an electrostatic sensitive device. Please handle with care. TOSHIBA CORPORATION 1/6 2SK1358 Electrical Characteristics (Ta = 25C) CHARACTERISTIC Gat...
Description FET Silicon N Channel MOS Type(for High Speed High Current DC-DC Converter Relay Drive and Motor Diver)
Field Effect Transistor
FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver)
FET/ Silicon N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver)

File Size 568.42K  /  6 Page

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    2SK1669

HITACHI[Hitachi Semiconductor]
Part No. 2SK1669
OCR Text ...S V(BR)GSS I GSS 250 30 -- -- 2.0 -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 20 3100 1330 190 45 170 270 150 1.0 90 Max -- -- 10 250 3.0 0.095 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 30...
Description Silicon N-Channel MOS FET

File Size 46.48K  /  8 Page

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    2SK1859

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SK1859
OCR Text ...BR)GSS I GSS Min 900 30 -- -- 2.0 -- 2.3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.0 3.7 980 400 195 20 80 125 100 0.9 1000 Max -- -- 10 250 3.0 3.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 6 A, ...
Description Silicon N-Channel MOS FET
Silicon N Channel MOS FET

File Size 32.09K  /  6 Page

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