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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7B163635B-PI75 K7A161830B-PI16 K7A161830B-PI25 K7A161830B-Q_PC_125-16 K7A161831B-PI20 K7A161831B-Q_PC_120 K7A161835B-Q_PC_175 K7A163630B-PI16 K7A163630B-PI25 K7A163631B K7A163631B-PI20 K7B161835B-PI75 K7A161831B-QPC120 K7A161830B-QPC125-16 K7A161835B-QPC175
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| OCR Text |
...tice.
-1-
July 2005 Rev 1.0
K7A163631B K7A161831B
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchr...79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 32,33,34,35,36,37,42 43,44,45,46,47,48,49 50... |
| Description |
18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
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| File Size |
365.85K /
19 Page |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7B803625M K7B801825M
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| OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History Initial draft Change DC Characteristics. ISB value from 60mA to 90mA at -8 ISB value from 50...79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,7... |
| Description |
256Kx36 & 512Kx18 Synchronous SRAM
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| File Size |
570.25K /
21 Page |
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YAGEO CORP
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| Part No. |
SSL1306T-150M-N SSL1306T-331M-S
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| OCR Text |
0 15.24 +0 3r d. 2nd. 1st. 7.11 +0 12.7 2.54 2.54 ssl - - p r od uct i d e n ti f icati on international no. tolerance inductance ...79 2.92 ssl0804 13.21 7.37 2.79 2.92 ssl0810 13.21 7.37 2.79 2.92 ssl1306 18.29 12.45 2.... |
| Description |
1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
235.89K /
6 Page |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7N163601M K7N161801M
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| OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 0.2 History 1. Initial document. 1. Update ICC & ISB values. 1. Change ISB value from 80mA to 110mA ...79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30
ADV WE CLK CKE CS1 CS2 CS2 BWx(x=a,b,c,d)... |
| Description |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
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| File Size |
314.12K /
20 Page |
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it Online |
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椋???″????浣?涓??)??????
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| Part No. |
MPXV5010D
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| OCR Text |
... applied pressure. features ? 5.0% maximum error over 0 to 85 c ? ideally suited for mi croprocessor or microcontroller-based systems ? d...79 b 10.54 0.425 0.415 10.79 c 5.38 0.230 0.212 5.84 d 0.96 0.042 0.038 1.07 g 0.100 bsc 2.54 bsc h ... |
| Description |
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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| File Size |
438.93K /
18 Page |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7N403601M K7N401801M
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| OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition a...79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
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32
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| Description |
128Kx36 & 256Kx18 Pipelined NtRAM-TM
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| File Size |
263.63K /
17 Page |
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it Online |
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Price and Availability
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