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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M80LVR APT50M80 APT50M80B2VR
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| OCR Text |
58A 0.080W
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(... |
| Description |
POWER MOS V 500V 58A 0.080 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
37.07K /
2 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75JLL APT30M75BLL APT30M75SLL
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| OCR Text |
58A 0.075W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
56.73K /
2 Page |
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LAPIS SEMICONDUCTOR CO LTD
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| Part No. |
MSM6655-XXXGS-K MSM6650GS-BK
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| OCR Text |
...-xxx, msm6652a/53a/ 54a/55a/56a/58a-xxx, msm66p56-xx, msm6650 internal mask rom voice synthesis ic, internal one-time-programmable (otp) rom voice synthesis ic, external rom drive voice synthesis ic 1/126 general description the ... |
| Description |
96.5 SEC, SPEECH SYNTHESIZER, PDSO24
4194.3 SEC, SPEECH SYNTHESIZER, PQFP64
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| File Size |
853.10K /
127 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08
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| OCR Text |
...state resistance
V GS=10V, I D=58A
1Current limited by bondwire ; with an RthJC = 0.7K/W the chip is able to carry ID= 109A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; NL; 8 mOhm
OptiMOS Power-Transistor
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| File Size |
419.44K /
8 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75JFLL APT6038BFLL APT6038SFLL APT60M75
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| OCR Text |
58A
S G D
0.075W
S
POWER MOS 7TM
FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significa... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
58.43K /
2 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT58M80J
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| OCR Text |
58A, 0.11 Max
N-Channel MOSFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with lo... |
| Description |
N-Channel MOSFET
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| File Size |
257.72K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT58M50J
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| OCR Text |
58A, 0.065 Max
N-Channel MOSFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with l... |
| Description |
N-Channel MOSFET
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| File Size |
262.29K /
4 Page |
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ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
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| Part No. |
APT30GT60KR
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| OCR Text |
58A
Thunderbolt IGBTTM
TO-220
The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed.
IGBTTM
* Low For... |
| Description |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 58A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
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| File Size |
25.28K /
2 Page |
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