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74LS173D 2G102 ENA1238 4570HA 1N595 DSPIC 300A1 OVLHRKD8
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For thin-chip Found Datasheets File :: 9432    Search Time::2.422ms    
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    HMC523

Hittite Microwave Corporation
Part No. HMC523
OCR Text ...n 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the...
Description GaAs MMIC I/Q MIXER 15 - 23.6 GHz

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    HMC524

Hittite Microwave Corporation
Part No. HMC524
OCR Text ...n 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the...
Description GaAs MMIC I/Q MIXER 22 - 32 GHz

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    HMC525

Hittite Microwave Corporation
Part No. HMC525
OCR Text ...n 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the...
Description GaAs MMIC I/Q MIXER 4.0 - 8.5 GHz

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    HMC526

Hittite Microwave Corporation
Part No. HMC526
OCR Text ...n 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the...
Description GaAs MMIC I/Q MIXER 6 - 10 GHz

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    Advanced Micro Devices, Inc.
Cinch Connectors
Part No. AM29F016B-120FC AM29F016B-120FI AM29F016B-75FC AM29F016B-120F4C AM29F016B-120F4I AM29F016B-75FI AM29F016B-150F4I AM29F016B-150FC AM29F016B-120FE AM29F016B-75F4C AM29F016B-120F4E AM29F016B-150FE AM29F016B-150F4EB AM29F016B-150E4C AM29F016B-120E4EB AM29F016B-120EEB AM29F016B-150EEB AM29F016B-150FEB AM29F016B-150SEB AM29F016B-150E4E AM29F016B-150E4EB AM29F016B-75SC AM29F016B-75FIB AM29F016B-75EIB AM29F016B-75EC AM29F016B-75E4I AM29F016B-120EI AM29F016B-90SI AM29F016B-75ECB AM29F016B-90FEB AM29F016B-120EC AM29F016B-90FI AM29F016B-90SEB AM29F016B-90FC AM29F016B-150E4I AM29F016B-120E4I AM29F016B-90EEB AM29F016B-75SIB AM29F016B-120SI AM29F016B-150EC AM29F016B-150SI AM29F016B-150EI
OCR Text ...125 c) package type e = 48-pin thin small outline package (tsop) standard pinout (ts 048) f = 48-pin thin small outline package (tsop) reve...chip, or suspending/resuming the erase operation. after the system writes the autoselect command se-...
Description 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS4410 with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to the IRFZ44VL with Lead Free packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL4610 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU48Z with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ44VZS with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFS4410 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS4410ZPBF with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ44VZS with Lead-Free Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3007 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL2505 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7832Z with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF3007L with Standard Packaging
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL1104L with Lead Free Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF3007 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR3103 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3412 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ46N with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ46Z with Standard Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB41N15D with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU48Z with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3707ZCPBF with Standard Packaging
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1404L with Standard Packaging
PDP Switch 230V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4233PBF with Standard Packaging
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1404L with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU7833 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU7833 with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3714ZS with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRL2505 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7831 with Lead Free Packaging
x8 Flash EEPROM x8闪存EEPROM
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3007L with Lead Free Packaging x8闪存EEPROM

File Size 806.24K  /  40 Page

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    HMC527

Hittite Microwave Corporation
Part No. HMC527
OCR Text ...n 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the...
Description GaAs MMIC I/Q MIXER 8.5 - 13.5 GHz

File Size 267.06K  /  6 Page

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    HMC528

Hittite Microwave Corporation
Part No. HMC528
OCR Text ...n 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the...
Description GaAs MMIC I/Q MIXER 11 - 16 GHz

File Size 267.84K  /  6 Page

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    HMC553

Hittite Microwave Corporation
Part No. HMC553
OCR Text ...n 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the...
Description GaAs MMIC FUNDAMENTAL MIXER, 7 - 14 GHz

File Size 240.25K  /  6 Page

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    HMC554

Hittite Microwave Corporation
Part No. HMC554
OCR Text ...n 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the...
Description GaAs MMIC FUNDAMENTAL MIXER, 11 - 20 GHz

File Size 257.00K  /  6 Page

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For thin-chip Found Datasheets File :: 9432    Search Time::2.422ms    
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