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ruggedness Datasheet PDF File

For ruggedness Found Datasheets File :: 7783 Search Time::0.765ms
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				HVVi Semiconductors, Inc.
Part No.	HVV1012-060
OCR Text	...cellent Excellent High FEaTURES ruggedness * High Power Power Gain ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Symbol Parameter Value ABSOLUTE MAXIMUM RATINGS 105 Symbol Drain-Source Voltage 105 Parameter VDSS Drain-Source Voltage Va...
Description	L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Apllications L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications
File Size	705.74K / 2 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1012-100
OCR Text	... 48V ExcellentGain High Power ruggedness * Supply Voltage High Power Gain *** 48V Supply Voltage Excellent ruggedness Excellent MAXIMUM ABSOLUTE ruggedness RATINGS * * 48V Supply Voltage 48V Supply Voltage RATINGS ABSOLUTE MAXIMUM * *...
Description	L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
File Size	810.16K / 2 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1012-250 HVV1012-250-EK
OCR Text	ruggedness TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FeatuRes * Silicon MOSFET Technology * Operation from 24V to 50V * High Power Gain * Extreme R...
Description	L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10楼矛s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
File Size	684.79K / 5 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF31661
OCR Text	...Width=1154s Output Load VSWR ruggedness 10:1 Output Load Impedance Power Control VRAMP Power Control Range Transient Spectrum Transient Spectrum Under Extreme Conditions Power Degradation from Nominal Conditions 5dBm to 14dBm 1...
Description	QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
File Size	389.92K / 16 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1214-025
OCR Text	...nductor Company! * Excellent ruggedness * Excellent ruggedness * 48V Supply Voltage Supply The high48VSupply Voltage power HVV1214-075 High Power Gain Voltage device is a high 48V *voltage silicon enhancement mode RF transistor High P...
Description	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
File Size	642.96K / 2 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF31451
OCR Text	...WR Output Load VSWR Output Load ruggedness Output Load Impedance Note: VRAMP,MAX =3/8*VBATT +0.18<1.6V -86 -84 -25 -5 dBm dBm dBm dBm dBm dBm -30 -7 -36 -20 50 2.5:1 6:1 10:1 50 2 of 18 7628 Thorndike Road, Greensbo...
Description	QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE
File Size	310.65K / 18 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF5146PCBA-41X
OCR Text	...Width=1154s Output Load VSWR ruggedness 10:1 Output Load Impedance Power Control VRAMP Power Control Range Notes: VRAMP_RP =VRAMP set for 34.2dBm at nominal conditions. Rev A1 DS050928 7628 Thorndike Road, Greensboro, NC ...
Description	QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
File Size	624.48K / 13 Page	View it Online	Download Datasheet

				RFM[RF Monolithics, Inc] ETC List of Unclassifed Manufacturers
Part No.	RF3140 RF3140PCBA EGSM900DCS GSM850 EGSM900PCS
OCR Text	...VSWR Stability Output Load VSWR ruggedness Output Load Impedance 45 0 824 to 849 +35.0 33 55 +3 -86 -35 -25 -30 -15 -30 MHz dBm dBm % dBm dBm dBm dBm dBm dBm dBm dBm 2.5:1 8:1 10:1 50 55 dB VRAMP =0.2V to VRAMP MAX Spurious<-36dBm, RBW=3M...
Description	QUAD-BAND GSM850/GSM900/DCS/PCS PCS
File Size	247.41K / 16 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1214-100 HVV1214-100-EK
OCR Text	ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty For Ground Based Radar Applications FeatuRes * Silicon MOSFET Technology * Operation from 24V to 50V * High Power Gain * Extreme ruggedness * Int...
Description	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
File Size	784.41K / 5 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6VP61K25HR6 MRFE6VP61K25HSR6
OCR Text	... Field Effect Transistors High ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aeros...
Description	RF Power Field Effect Transistors High ruggedness N--Channel Enhancement--Mode
File Size	924.80K / 13 Page	View it Online	Download Datasheet

For ruggedness Found Datasheets File :: 7783 Search Time::0.765ms
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