...B716 and 2SB716A are grouped by h FE1 as follows. D E 400 to 800 --
2SB715, 2SB716 250 to 500 2SB716A 250 to 500
2
2SB715, 2SB716, ...v)
Typical Transfer Characteristics -10 1,000 Collector Current IC (mA) -3 -1.0 -0.3 Ta = 100C -0...
...
vCE(sat) vBE fT
v v Mhz
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE
Rank
1
Transistor
PC -- Ta
500 -80 Ta=25C -70 -50 25C Ta=75C -40 -25C
2SB726
IC -- vCE
-60 vCE=-5v
IC -- vBE
Colle...
...SB738 and 2SB739 are grouped by h FE as follows. C 160 to 320
2
2SB738, 2SB739
Maximum Collector Dissipation Curve 1.2 Collector Powe...v)
Typical Output Characteristics (2) -2.0 -25 -20 -15 -1,000 Collector Current IC (mA) -300 -100...
...ition frequency Noise voltage
*h
vCE(sat) vBE fT Nv
v v Mhz mv
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE
Rank
1
Transistor
PC -- Ta
500 -160 -140
2SB745, 2SB745A
IC -- vCE
Ta=25C -160 vCE=-...
Description
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 v, NPN, Si, SMALL SIGNAL TRANSISTOR
...max -100 -1 Unit nA A v v v
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE
Rank
4.10.2
high collector to emitter voltage vCEO. Low noise voltage Nv. M type package allowing easy automatic and manual ins...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)