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Sirenza Microdevices Inc
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Part No. |
SGA-7489
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OCR Text |
...is RFIC uses the latest Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance... |
Description |
Amplifier, Other - Datasheet Reference From old datasheet system
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File Size |
566.89K /
8 Page |
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it Online |
Download Datasheet |
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NTE
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Part No. |
NTE103ANPN
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OCR Text |
germanium complementary transistors medium power amplifier description: the nte102a (pnp) and nte103a (npn) are germanium complementary transistors in a to1 type package designed for use as a medium power amplifier. absolute maximum ratings... |
Description |
germanium Complementary Transistors Medium Power Amplifier
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File Size |
44.22K /
2 Page |
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it Online |
Download Datasheet |
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Infineon
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Part No. |
BFP740F
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OCR Text |
germanium rf transistor* ? high gain ultra low noise rf transistor ? provides outstanding performance for a wide rang e of wireless applications up to 10 ghz ? ideal for cdma and wlan applications ? outstanding noise figure f = 0.5... |
Description |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
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File Size |
32.25K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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