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  field-effect Datasheet PDF File

For field-effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    ERICSSON[Ericsson]
Part No. PTF10154
Description 85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor

File Size 255.49K  /  5 Page

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    PTF10021

Ericsson Microelectronics
Part No. PTF10021
Description 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor

File Size 277.83K  /  6 Page

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    NDH8320C

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. NDH8320C
Description Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N & P-Channel Enhancement Mode Field Effect Transistor

File Size 72.79K  /  8 Page

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    AH277A AH277AZ4-AE1 AH277AZ4-BE1 AH277AZ4-CE1

BCD Semiconductor Manuf...
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing, Ltd.
Part No. AH277A AH277AZ4-AE1 AH277AZ4-BE1 AH277AZ4-CE1
Description COMPLEMENTARY OUTPUT HALL EFFECT LATCH 互补输出霍尔效应锁存
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT

File Size 168.41K  /  10 Page

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    AH276Z4-BE1 AH276Z4-AE1 AH276Z4-E1 AH276 AH276Z4-CE1

BCD Semiconductor Manufacturing, Ltd.
BCDSEMI
BCD Semiconductor Manufacturing Limited
Part No. AH276Z4-BE1 AH276Z4-AE1 AH276Z4-E1 AH276 AH276Z4-CE1
Description COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
COMPLEMENTARY OUTPUT HALL EFFECT LATCH 互补输出霍尔效应锁存
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT

File Size 175.39K  /  10 Page

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    TPC8401

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TPC8401
Description 80 AMP MINI-ISO AUTOMOTIVE RELAY
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII)

File Size 748.09K  /  11 Page

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    BCD Semiconductor Manufacturing, Ltd.
Part No. AH276Z4-CG1 AH276Z4-AG1 AH276Z4-CE1 AH276Z4-BG1
Description MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4
MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT ROHS COMPLIANT, TO-94, SIP-4,
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4

File Size 299.91K  /  10 Page

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    PTF102027

Ericsson Microelectronics
Part No. PTF102027
Description 40 Watts, 92560 MHz GOLDMOS Field Effect Transistor
40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR

File Size 205.81K  /  6 Page

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    PTF10149

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF10149
Description 70 Watts, 92160 MHz GOLDMOS Field Effect Transistor
70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor

File Size 214.08K  /  6 Page

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    2SK3236

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SK3236
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
From old datasheet system
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

File Size 216.40K  /  6 Page

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For field-effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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