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NEC Corp. NEC[NEC]
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Part No. |
2SJ621 2SJ621-T2B 2SJ621-T1B
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Description |
RF bipolar transistor; Collector Emitter Voltage, Vceo:600mV; transistor Polarity:dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT transistor Pch enhancement type MOS FET
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File Size |
71.11K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
CA3240 CA3240A CA3240AE CA3240AE1 CA3240E
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Description |
Op Amp, BiMOS, dual, MOSFET Inputs, bipolar Outputs, Low Bias, 4.5MHz Op Amp, BiMOS, dual, MOSFET Inputs, bipolar Outputs, 4.5MHz dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/bipolar Output
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File Size |
539.83K /
15 Page |
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it Online |
Download Datasheet
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Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
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Part No. |
CJD127 CJD127PNP CJD122 CJD122npn CJD122-npn
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Description |
SMD bipolar Power transistor npn Darlington COMPLEMENTARY SILICON POWER DARLINGTON transistor 互补性的芯片功率达林顿晶体管 From old datasheet system SMD bipolar Power transistor PNP Darlington
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File Size |
125.86K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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