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device non-isolated Datasheet PDF File

For device non-isolated Found Datasheets File :: 6411 Search Time::3.125ms
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				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text	...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERIN...non power-down mode mA 10 6 6 30 mA ICC2NS ICC3P ICC3PS ICC3N Active standby current in pow...
Description	32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.63K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text	...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERIN...non power-down mode mA 10 6 6 30 mA ICC2NS ICC3P ICC3PS ICC3N Active standby current in pow...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	116.54K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Orderin...non power-down mode Active standby current in power-down mode Active standby current in non power-do...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Orderin...non power-down mode Active standby current in power-down mode Active standby current in non power-do...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. * * * *...non power-down mode CKE VIH(min), CLK VIL(max), tCC = ICC2NS Input signals are stable ICC3P CK...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. * * * *...non power-down mode CKE VIH(min), CLK VIL(max), tCC = ICC2NS Input signals are stable ICC3P CK...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola Inc] Motorola, Inc. Motorola Mobility Holdings, Inc.
Part No.	MAC218A10FP MAC218-10FP MAC218-6FP MAC218-4FP MAC218A8FP MAC218A6FP MAC218-8FP MAC218A4FP
OCR Text	...tic body. Motorola Thyristor device Data (c) Motorola, Inc. 1995 1 MAC218FP Series MAC218AFP Series ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Peak Off-State Current (Either Direction) (VD = Rate...
Description	ISOLATED TRIACs THYRISTORS 8 AMPERES RMS 200 thru 800 VOLTS 400 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
File Size	92.11K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTE125N20E MTE125N20E_D ON2529
OCR Text	...ficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed sw...non-linearly with an increase of peak current in avalanche and peak junction temperature. 125 100...
Description	From old datasheet system TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM
File Size	227.99K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Man... Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	PA21A PA21 PA26 PA25 PA25A
OCR Text	...rrent limit circuits. While the device is well protected, the Safe Operating Area (SOA) curve must be observed. Proper heatsinking is requir...non-inverting gain of 2.8. Amp B is set up as a unity gain inverter driven from the output of amp A....
Description	POWER DUAL OPERATIONAL AMPLIFIERS POWER DUAL OPERATIONAL AMPLIFIERS 功耗双运算放大
File Size	83.30K / 5 Page	View it Online	Download Datasheet

For device non-isolated Found Datasheets File :: 6411 Search Time::3.125ms
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