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Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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Part No. |
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F010A-120EE AM28F010A-120EEB AM28F010A-120EIB AM28F010A-120FC AM28F010A-120FE AM28F010A-120FI AM28F010A-120FIB AM28F010A-120JC AM28F010A-120JCB AM28F010A-120JE AM28F010A-120JEB AM28F010A-70EE AM28F010A-70EC AM28F010A-90EC AM28F010A-90EE AM28F010A-70FC AM28F010A-90FC AM28F010A-90FCB AM28F010A-120FCB AM28F010A-150FC AM28F010A-150FCB AM28F010A-200FC AM28F010A-200FCB AM28F010A-70FCB AM28F010A-90ECB AM28F010A-200FEB AM28F010A-70FE AM28F010A-70FEB AM28F010A-90FEB AM28F010A-70ECB AM28F010A-200EC AM28F010A-90JEB AM28F010A-90JCB AM28F010A-90PCB AM28F010A-70JCB AM28F010A-200FIB AM28F010A-200JC AM28F010A-150JCB AM28F010A-150EIB AM28F010A-70JEB AM28F010A-70EIB AM28F010A-70JIB AM28F010A-90PIB AM28F010A-90JI AM28F010A-90JIB AM28F010A-150EE AM28F010A-150FI AM28F010A-200EEB
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Description |
1 Megabit (128 K x 8-Bit) cmos 12.0 Volt/ Bulk Erase Flash memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 1兆位128亩8位)的cmos 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 1兆位128亩8位)cmos 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 1兆位28亩8位)的cmos 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) cmos 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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File Size |
242.75K /
35 Page |
View
it Online |
Download Datasheet |
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Renesas Electronics, Corp. Renesas Electronics Corporation
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Part No. |
M6MGD13TW66CWG-P
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Description |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) cmos FLASH memory & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) cmos MOBILE RAM 134217728位(8388608字由16位)的cmos闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) cmos FLASH memory & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) cmos MOBILE RAM memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
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File Size |
119.78K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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