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RF Monolithics, Inc.
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| Part No. |
RO3101E-1
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| OCR Text |
... c 50 khz insertion loss il 2,5,6 1.4 2.2 db quality factor unloaded q q u 5,6,7 8280 50 loaded q q l 1228 temperature stability turnover...6nc power test electrical connections the saw resonator is bidirectional and may be installed with ... |
| Description |
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| File Size |
90.40K /
2 Page |
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Micron Technology, Inc.
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| Part No. |
MT58L1MV18D
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| OCR Text |
...s/cycle/mhz) 3.5ns/6ns/166 mhz -6 4.0ns/7.5ns/133 mhz -7.5 5ns/10ns/100 mhz -10 configurations 512k x 18 mt58l512l18d 256k x 32 mt58l256l3...6nc dqc 7nc dqc 8 dqb dqc 9 dqb dqc 10 v ss 11 v dd q 12 dqb dqc 13 dqb dqc 14 v dd 15 v dd 16 nc 17... |
| Description |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8MB的：12k × 1856 × 32/36 3.3V的I / O的流水线，双氰胺SYNCBURST的SRAM
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| File Size |
425.39K /
26 Page |
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Micron Technology, Inc.
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| Part No. |
MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V1MV18D
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| OCR Text |
...s/cycle/mhz) 3.5ns/6ns/166 mhz -6 4.0ns/7.5ns/133 mhz -7.5 5ns/10ns/100 mhz -10 ? configurations 3.3v v dd , 3.3v or 2.5v i/o 1 meg x 18 mt5...6nc dqc 7nc dqc 8 dqb dqc 9 dqb dqc 10 v ss 11 v dd q 12 dqb dqc 13 dqb dqc 14 nc 15 v dd 16 nc 17 v... |
| Description |
16Mb SYNCBURST?SRAM
16Mb SYNCBURST?/a> SRAM
16Mb SYNCBURSTSRAM
16Mb SYNCBURST?/a> SRAM
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| File Size |
512.89K /
34 Page |
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it Online |
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Micron Technology, Inc.
Micrel Semiconductor, Inc.
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| Part No. |
MT58L32L32D MT58L32L36D MT58L64L18D
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| OCR Text |
...timing (access/cycle/mhz) 3.5ns/6.0ns/166 mhz -6 4.2ns/7.5ns/133 mhz -7.5 5ns/10ns/100 mhz -10 ? configurations 64k x 18 mt58l64l18d 32k x 3...6nc dqc 7nc dqc 8 dqb dqc 9 dqb dqc 10 v ss 11 v dd q 12 dqb dqc 13 dqb dqc 14 v dd 15 v dd 16 nc 17... |
| Description |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器) 32KX82,3.3 O的流水线，双氰胺SyncBurst的SRAM兆，3.3V的输输出，流水线式，双循环取消选择，同步脉冲静态存储器
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| File Size |
322.23K /
17 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT58L32L32P MT58L32L36P MT58L64L18P
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| OCR Text |
...timing (access/cycle/mhz) 3.5ns/6.0ns/166 mhz -6 4.2ns/7.5ns/133 mhz -7.5 5ns/10ns/100 mhz -10 ? configurations 64k x 18 mt58l64l18p 32k x 3...6nc dqc 7nc dqc 8 dqb dqc 9 dqb dqc 10 v ss 11 v dd q 12 dqb dqc 13 dqb dqc 14 v dd 15 v dd 16 nc 17... |
| Description |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器) 64K的18.3V的I / O的流水线，SCD的SyncBurst的SRAM兆，3.3V的输输出，流水线式，单循环取消选择，同步脉冲静态存储器
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| File Size |
325.43K /
17 Page |
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Infineon Technologies A...
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| Part No. |
IPG20N10S4L-22A
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| OCR Text |
... v ds = v gs , i d = 25a 1.1 1.6 2.1 zero gate voltage drain current 4) i dss v ds =100v, v gs =0v, t j =25c -0.011a v ds =100v, v gs =0...6nc gate to drain charge q gd -4.89.6 gate charge total q g -2127 gate plateau voltage v plateau -3.... |
| Description |
Dual N-channel Logic Level - Enhancement mode
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| File Size |
204.61K /
9 Page |
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it Online |
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