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5.8c w Datasheet PDF File

For 5.8c w Found Datasheets File :: 1941 Search Time::1.234ms
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				SANYO[Sanyo Semicon Device]
Part No.	VPS10
OCR Text	... 10 V, CL = 10 pF, VIN (DC) = 2.5 V, VOUT (p-p) = 40 V, f = 10 MHz clock VCC = 80 V, VBB = 10 V, CL = 10 pF, VIN (DC) = 2.5 V, VOUT (p-p) = ...8C/w. In actual practice, the ambient temperature and operating conditions will allow a heat sink sm...
Description	CRT Display Video Output Amplifier: High-Voltage/ wideband Amplification CRT Display Video Output Amplifier: High-Voltage, wideband Amplification
File Size	103.19K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRU431AL IRU431ALCL3 IRU431ALCL5 IRU431L IRU431LCL3 IRU431LCL5
OCR Text	...racy while IRU431AL provides 60.5% initial accuracy. FEATURES SOT-23 Packages Voltage Reference Initial Accuracy (1% for IRU431L and 0...8C DTA is the rated operating free air temperature of the device. aVREF can be positive or negative ...
Description	LOw -VOLTAGE ADJUSTABLE PRECISION SHUNT REGULATOR
File Size	45.58K / 6 Page	View it Online	Download Datasheet

				Samsung semiconductor Samsung Electronic
Part No.	K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text	...) * Deleted AC parameter notes 5. Revision 1.4 (November, 2003) * Modified Pin Function description. Rev. 1.4 November 2003 SDRAM...8C 0.25 TYP 0.010 #54 #28 0.45~0.75 0.018~0.030 0.05 MIN 0.002 ( 0.50 ) 0.020 11.760.20 0.4630.00...
Description	64Mb H-die SDRAM Specification
File Size	142.04K / 14 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MCM63P636TQ200 MCM63P636TQ200R MCM63P636 MCM63P636ZP200 MCM63P636ZP200R MCM63P636ZP225 MCM63P636ZP225R MCM63P636ZP250 MCM63P636ZP250R
OCR Text	...) MCM63P636-200 = 4.9 ns Access/5 ns Cycle (200 MHz) * 3.3 V 200 mV VDD Supply, 2.0 V VDDI and VDDQ Supply * Internally Self-Timed Late wri...8C, 2E, 8E, 2G, 8G, 2J, 8J, 2L, 8L, 2N, 8N, 2R, 8R, 2U, 8U 1A, 9A, 1C, 3C, 7C, 9C, 1E, 4E, 5E, 6E, 9...
Description	64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
File Size	328.27K / 27 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	STK4432
OCR Text	...12 C13 C14 R9, R10 No. 2885--5/7 STK4432 Sample Application Circuit (protection circuit and muting circuit) Thermal Design The ...8C/w and Pd x (c-a + 2.8/4) + Ta 150C........................................ (3) No. 2885--6/7 ...
Description	AF Power Amplifier (25w 25w min, THD = 1.0%) From old datasheet system
File Size	213.83K / 7 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
Part No.	TN1215-600G TN1215-800G TN1215-G TN1215-X00G 5580
OCR Text	... V January 1998 - Ed: 4 1/5 TN1215-G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Parameter Junction to ambient (S=1cm2) Junction ...8C/w Rth=5C/w Rth=3C/w Rth=0C/w 110 115 6 4 2 0 0 20 40 60 80 100 120 140 =180 ...
Description	From old datasheet system SCR
File Size	65.34K / 5 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
OCR Text	... RAS CAS wE DQM -5- Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) PIN CONFIGURATION (Top view) CMOS SDRAM VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 N.C VDD DQM0 wE CAS RAS CS N.C BA0 BA1 A10/AP A0 ...
Description	64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
File Size	115.81K / 12 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE317
OCR Text	... -FO = 1.0MHz 30MHz/12.5V 13.5 14.2 Note 1. Pulsed through 25mH Inductor .725 (18.42) .127 (3.17) Dia (2 Holes) C E .250 (6.35) B .225 (5.72) E 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) ...
Description	Silicon NPN Transistor RF Power Output
File Size	22.46K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5351
OCR Text	.... . . . . . . . . . . . . . . . 5.0A Average On-State Current (TC = +60C, 180 conduction angle), IT(AV) . . . . . . . . . . . . . . . . . . ...8C/w Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	Silicon Controlled Rectifier (SCR) for High Speed Switching
File Size	20.45K / 2 Page	View it Online	Download Datasheet

For 5.8c w Found Datasheets File :: 1941 Search Time::1.234ms
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