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  40a Datasheet PDF File

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    IKP20N60T IKP20N60TA IKW20N60T

Infineon Technologies AG
Infineon Technologies A...
Part No. IKP20N60T IKP20N60TA IKW20N60T
OCR Text ...khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a t c =110c t c =80c i c , c o l l e c t o r c u r r e n t 1v 10v 100v 1000v 0.1a 1a 10a 10s 1ms dc t p =2s 50s 10ms f , switching frequency v ce , collector - emitter voltage figure 1 . collector...
Description IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
   IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

File Size 741.32K  /  14 Page

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    Infineon
Part No. 50N60T
OCR Text ...0h z 1kh z 10khz 100kh z 0a 20a 40a 60a 80a 100a 120a 140a t c =110c t c =80c i c , c o l l e c t o r c u r r e n t 1v 10v 100v 1000v 1a 10a 100a 10s 1ms dc t p =2s 50s 10ms f , switching frequency v ce , collector - emitter voltage figur...
Description IKW50N60T

File Size 594.75K  /  13 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. FGA20S120M
OCR Text ...125 150 175 1.0 1.5 2.0 2.5 3.0 40a 20 a 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter vol...
Description 40 A, 1200 V, N-CHANNEL IGBT

File Size 780.37K  /  8 Page

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    PM0004

Solid States Devices, Inc
Part No. PM0004
OCR Text ... units dc current gain (i c = 40a, v be = -2v) collector - emitter saturation voltage (i c = 40a, i b = 3.33a) v ce(sat) h fe *pulse test: pulse width = 300us, duty cycle = 2% t b = 25 e c t b = 125 e c 2.0 10.0 5.0 mamps t b...
Description POWER MODULE

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    Sinopower
Part No. SM4023NSKP
OCR Text ... v ds =20v, v gs =4.5v, i ds =40a - 35 42 q g total gate charge - 76 91 q gth threshold gate charge - 5.2 6.2 q gs gate-source charge - 12 14.4 q gd gate-drain charge v ds =20v, v gs =10v, i ds =40a - 15.5 18....
Description N-Channel Enhancement Mode MOSFET

File Size 305.14K  /  12 Page

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    NCE Power Semiconductor
Part No. NCE55H12
OCR Text ...ance r ds(on) v gs =10v, i d =40a - 4.1 5.5 m ? forward transconductance g fs v ds =25v,i d =40a 50 - - s dynamic characteristics (note4) input capacitance c lss - 4900 - pf output capacitance c oss - 470 - pf reve...
Description N-Channel Enhancement Mode Power MOSFET

File Size 394.57K  /  7 Page

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