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Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH4M36CJD-6 MH4M36CJD-7 MH4M36CJD-5 MH4M36CJD
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OCR Text |
4194304-WORD BY 36-BIT ) DYNAMIC RAM
DESCRIPTION
The MH4M36CJD is an 4M word by 36-bit dynamic RAM module and consists of 8 industry standard 4M X 4 dynamic RAMs in TSOP and 4 industry standard 4M X 1 dynamic RAMs in TSOP. The ICs are m... |
Description |
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模式(4194304 - Word6位)动态随机存储器 From old datasheet system
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File Size |
130.45K /
14 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M2V56S40TP M2V56S20TP-6 M2V56S20TP M2V56S20
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OCR Text |
...8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 13... |
Description |
256M Synchronous DRAM From old datasheet system
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File Size |
238.59K /
49 Page |
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it Online |
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http:// RENESAS[Renesas Electronics Corporation]
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Part No. |
M5M5V416CWG-55HI M5M5V416CWG-70HI
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OCR Text |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's high-perf ormance 0.18m CMOS technology . The ... |
Description |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM Memory>Low Power SRAM
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File Size |
247.38K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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