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  20v-200v Datasheet PDF File

For 20v-200v Found Datasheets File :: 5445    Search Time::3.109ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. FGFP90N30TU FGPF90N30
OCR Text ... Collector Current, IC [A] 20V 15V 12V 20V 15V 12V 180 180 120 10V 120 10V 60 VGE = 8V 60 VGE = 8V...200V 1 Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in tem...
Description 300V, 90A PDP IGBT

File Size 641.91K  /  7 Page

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    2N7593U3

International Rectifier
Part No. 2N7593U3
OCR Text ...e leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs = 12v, i d = ...200v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) 0.21 ? v gs =...
Description 250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.

File Size 193.03K  /  9 Page

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    FS10VS-12

Renesas Electronics Corporation
Part No. FS10VS-12
OCR Text ...T CHARACTERISTICS (TYPICAL) VGS=20V 10V 8V 6V PD = 150W CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= 8V 150...200V VGS = 10V RGEN = RGS = 50 td(off) tf td(on) tr 5 7 100 23 5 7 101 3 Tch = 25C Crss 2 f = ...
Description MITSUBISHI Nch POWER MOSFET

File Size 78.81K  /  5 Page

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    IRHF7330SESCS

International Rectifier
Part No. IRHF7330SESCS
OCR Text ...e leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 41 v gs =12v, i d = 2.9a q gs gate-to-source charge 7.0 nc v ds = 200v q gd gate-to-drain (miller) charge 20 t d (on...
Description 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package

File Size 135.86K  /  8 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS3VS-10 FS1AS-16A
OCR Text ...Test DRAIN CURRENT ID (A) VGS = 20V 10V 8V 5 TC = 25C Pulse Test VGS = 20V 10V 8V PD = 60W DRAIN CURRENT ID (A) 8 4 6 3...200V VGS = 10V RGEN = RGS = 50 SWITCHING TIME (ns) tf CAPACITANCE Ciss, Coss, Crss (pF) ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 45.41K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS3VS-10
OCR Text ...Test DRAIN CURRENT ID (A) VGS = 20V 10V 8V 5 TC = 25C Pulse Test VGS = 20V 10V 8V PD = 60W DRAIN CURRENT ID (A) 8 4 6 3...200V VGS = 10V RGEN = RGS = 50 SWITCHING TIME (ns) tf CAPACITANCE Ciss, Coss, Crss (pF) ...
Description HIGH-SPEED SWITCHING USE

File Size 40.39K  /  4 Page

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    FK10UM-9

Renesas Electronics Corporation
Part No. FK10UM-9
OCR Text ...25? pulse test 6v 5v 4v v gs = 20v 10v 7v 10 8 6 4 2 0 0 4 8 12 16 20 p d = 125w t c = 25? pulse test v gs =20v 10v 6v 4v 5v 0 23 10 ? 5...200v tch = 25? i d = 10a 23 5710 0 10 3 7 5 3 2 10 2 7 5 23 5710 1 10 ? 10 1 3 2 tch = 25? v dd ...
Description MITSUBISHI Nch POWER MOSFET

File Size 88.23K  /  6 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS3UM-9
OCR Text ... = 25C Pulse Test PD=60W VGS=20V 10V 8V 6 VGS=20V 10V 8V 6V 2 5V 0 0 10 20 30 40 50 3 6V 2 4 1 5V 0 0 4 8 12 16 20 DRAIN-S...200V VGS = 10V RGEN = RGS = 50 CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 Coss ...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 47.22K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS3UM-9
OCR Text ... = 25C Pulse Test PD=60W VGS=20V 10V 8V 6 VGS=20V 10V 8V 6V 2 5V 0 0 10 20 30 40 50 3 6V 2 4 1 5V 0 0 4 8 12 16 20 DRAIN-S...200V VGS = 10V RGEN = RGS = 50 CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 Coss ...
Description HIGH-SPEED SWITCHING USE

File Size 42.09K  /  4 Page

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    FS3UM-9

Renesas Electronics Corporation
Part No. FS3UM-9
OCR Text ... = 25C Pulse Test PD=60W VGS=20V 10V 8V 6 VGS=20V 10V 8V 6V 2 5V 0 0 10 20 30 40 50 3 6V 2 4 1 5V 0 0 4 8 12 16 20 DRAIN-S...200V VGS = 10V RGEN = RGS = 50 CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 Coss ...
Description MITSUBISHI Nch POWER MOSFET

File Size 79.68K  /  5 Page

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