1.801.88 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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1.801.88 Datasheet PDF File

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				Astec America, Inc Emerson Network Power
Part No.	LPS350 LPS352-C LPS353-C LPS354-C LPS355-C
OCR Text	...forced air, (-C) (-CF) (-CEF) 2:1 wide ratio 5 V @ 500 mA regulated, 12 V @ 150 20 ms @ 350 W load, 115 VAC nominal line at factory voltage ...801, -2, -3, -4, -5, -6, Level 3 Humidity: Operating; non-condensing 5% to 95% Vibration: Three orth...
Description	350 Watts LPS350 Series Active power factor correction
File Size	504.79K / 2 Page	View it Online	Download Datasheet

				Renesas
Part No.	2SC5894
OCR Text	...p. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the m...801 0.776 0.793 0.728 0.700 0.674 0.649 0.624 0.598 0.567 0.554 0.526 0.501 0.487 0.471 0.455 0.434 ...
Description	Transistors>Amplifiers/Bipolar
File Size	131.29K / 14 Page	View it Online	Download Datasheet

				RENESAS[Renesas Electronics Corporation]
Part No.	2SC5894
OCR Text	...p. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the m...801 0.776 0.793 0.728 0.700 0.674 0.649 0.624 0.598 0.567 0.554 0.526 0.501 0.487 0.471 0.455 0.434 ...
Description	From old datasheet system Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
File Size	126.00K / 13 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	B12V10514 B12V10592 B12V10535 B12V105 B12V10500 B12V10502
OCR Text	... dice. * Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz * High Gain \|S21\| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absol...801 3.388 3.273 3.019 2.818 2.722 2.570 2.511 2.290 2.187 2.162 Mag 151 134 106 80 72 57 44 30 20 9 ...
Description	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
File Size	37.71K / 8 Page	View it Online	Download Datasheet

				California Eastern Laboratories ETC[ETC]
Part No.	NE650103M
OCR Text	... 40.0 11.0 45 5.0 -2.5 4.0 7.0 -1.0 4.5 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 23 mA Channel to Case f = 2.3 GHz, VDS = 10.0 V Rg = 100 ...801 -168.706 -170.446 -171.829 -173.218 -174.376 -175.359 -176.410 -177.310 -178.122 -178.884 -179.6...
Description	NECS 10 W L & S-BAND POWER GaAs MESFET
File Size	133.22K / 6 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL21E010MK
OCR Text	... Rth Channel to Case VDS=5V IDS=1.5mA IGS=-15A VDS=28V f=2.17GHz IDS(DC)=125mA -0.1 -5 39.0 13.0 - Limit Typ. -0.2 40.0 14.0 40 3.1 U...801 74.6 0.005 -11.9 0.375 -111.0 0.4 0.946 -164.3 9.953 64.0 0.004 -12.0 0.459 -119.0 0.5 0.945 -16...
Description	High Voltage - High Power GaAs FET
File Size	304.62K / 6 Page	View it Online	Download Datasheet

				ETC
Part No.	28B2400-000 28B0562-200 28B05XX-XXX 28B13XX-XXX
OCR Text	...66 36.00 .71 38.86 .76 60.96 1.14 0.89 B 2.67 C Imp@100Mhz 23 4.00 .13 5.08 .15 5.08 .15 5.08 .15 6.35 .15 7.92 .15 6.3...801.02 43.691.02 43.691.02 52.321.02 50.801.02 C 10.00.25 20.02.51 19.05.64 14.66.38 6.81.20 31.0...
Description	(2000 Series) Ferrites for EMI Suppression
File Size	168.33K / 3 Page	View it Online	Download Datasheet

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