1.0a)
2Sa2048
!Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -1.0a) 2) Low saturation voltage, typically (Typ. : -150mV at IC = -500ma, IB = -50ma) 3) Strong discharge power for inductive load and capacitance load. 4) Comple...
Description
Medium power transistor (−30V, −1.0a) Medium power transistor (-30V, -1.0a)
1) High speed switching. (Tf : Typ. : 20ns at IC = -2.0a) 2) Low saturation voltage, typically (Typ. : -250mV at IC = -1.0a, IB = -100ma) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5731 !Externa...
...BO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -50 -50 -7 -2.0 -3.5 -200 1000 625 150 -55 to 150 Unit V V V a ma mW C C
JEDEC JEITa TOSHIBa
TO-92 2-3S1a
Weight: 0.01 g (typ.)
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm...
...ote) Tj Tstg Rating -20 -10 -7 -1.5 -2.5 -150 500 750 150 -55 to 150 Unit V V V a ma mW C C
JEDEC JEITa TOSHIBa
2-3S1a
Weight: 0....3
2001-10-29
2Sa2058
rth - tw
1000
Transient thermal resistance rth (C/W)
100
10 ...
...ating -20 -20 -7 -3.0 -5.0 -300 1.0 2.5 150 -55 to 150 Unit V V V a ma
JEDEC
W C C
SC-62 2-5K1a
JEITa TOSHIBa
Weight: 0.05 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Electrical Ch...
...nted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-of...3
20 15 IB = 10 ma
DC current gain
-2
100
-1
0 0
Common emitter Ta = 25C Single...