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  0.4-3.6 Datasheet PDF File

For 0.4-3.6 Found Datasheets File :: 601946    Search Time::11.969ms    
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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (...4 -80 -60 -40 -30 -20 1000 -1.8 10000 hFE - IC (A) Ta = 100C Collector current DC cur...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base volta...4 V, IC = -1 A VCE = -4 V, IC = -3 A IC = -3 A, IB = - 0.375 A VCE = -10 V, IC = - 0.1 A, f = 10 MHz...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns ...4 -80 -60 -40 Common emitter Ta = 25C Single nonrepetitive pulse -20 10000 Common emitter VCE = -2 V...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...4 -40 Ta = 100C 25 Collector current -3 DC current gain -20 -10 IB = -5 mA 100 ...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nt gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...4.0 -250 1000 625 150 -55 to 150 Unit V V V A mA mW C C JEDEC JEITA TOSHIBA 2-3S1A Weight...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... tf Conditions VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE...4 Ratings min typ max (--)0.1 (--)0.1 60 35 (10)15 (280)140 1.5 (-0.3)0.2 (--)2.0 MHz pF V V V V V s...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base volta...4 A, Resistance loaded IB1 = - 0.4 A, IB2 = 0.4 A VCC = -40 V 200 100 - 0.5 0.5 1.0 0.15 V s s s Min...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...10.00.2 1.00.2 5.00.1 C 1.0 2.250.2 0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 2.50.2 2.50.2 123 0.550.1 Absolute Maximum Ratings ...4-A1 Package Internal Connection C B E Electrical Characteristics TC = 25C 3C Parameter Co...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns...4 -0.4 IB = -2 mA hFE - IC Ta = 100C (A) -1.2 hFE 100 25 Collector current DC ...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns ...4 Lot No. C A line indicates lead (Pb)-free package or lead (Pb)-free finish. IB2 Duty cycle...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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