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  0.17m Datasheet PDF File

For 0.17m Found Datasheets File :: 245    Search Time::2.015ms    
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    Maxim
Part No. MAX8537EVKIT
OCR Text 0; 7/04 MAX8537 Evaluation Kit General Description The MAX8537 evaluation kit (EV kit) is a fully assembled and tested circuit board th...17m, SO-8 International Rectifier IRF7807V Not installed, SO8 MOSFETs, n-channel, 30V, 13.6A, 9.5m, ...
Description Evaluation Kit for the MAX7450, MAX7451
From old datasheet system

File Size 219.48K  /  11 Page

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    FS70VSJ-2

Powerex Power Semicondu...
Powerex Power Semiconductors
Mitsubishi Electric Corporation
Part No. FS70VSJ-2
OCR Text ... r 10.5MAX. 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 -0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 0.4 4V DRIVE VDSS ...17m ID ......................................................................................... 70A...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USEl
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 43.06K  /  4 Page

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    AO4476

Alpha & Omega Semiconductors
Part No. AO4476
OCR Text ...rrent TJ=125C 1 60 8.5 11 14 33 0.73 1.0 5 1000 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 340 100 1.3 18 VGS=10V, VDS=15V, ID=15A 8.5 3.1 4.8 6 VGS=10V, VDS=15V, RL=1, RGEN=3 IF=15A, dI/dt=100A/s 3.8 20 3.8 28 21 17 10.5 2.1 Min 30 1 5...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 102.55K  /  4 Page

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    APTM50DAM17G

Microsemi Corporation
Part No. APTM50DAM17G
OCR Text ... Features Q2 * G2 S2 0/VBUS * * * Benefits S2 G2 VBUS 0/VBUS OUT Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for eas...
Description Boost chopper MOSFET Power Module

File Size 270.10K  /  6 Page

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    APTM50DUM17G

Microsemi Corporation
Part No. APTM50DUM17G
OCR Text ...15V VBus = 333V ID = 180A R G = 0.5 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 180A, R G = 0.5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 180A, R G = 0.5 Min Typ 28 5.6 0.36 560 160 280 21 38 75 93 4140 3380 622...
Description Dual common source MOSFET Power Module

File Size 278.45K  /  7 Page

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    APTM50SKM17G

Microsemi Corporation
Part No. APTM50SKM17G
OCR Text ...rs High level of integration 0/VBUS * * * G1 S1 VBUS 0/VBUS OUT Benefits * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low prof...
Description Buck chopper MOSFET Power Module

File Size 271.92K  /  7 Page

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    AO4418 AO4418L

Alpha & Omega Semiconductor...
Alpha & Omega Semiconductors
Part No. AO4418 AO4418L
OCR Text ...rent 1.5 40 9.8 14.2 12.3 32 22 0.76 1 4.3 758 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 128 0.7 16.6 VGS=10V, VDS=15V, ID=11.5A 8.6 2.5 4.9 5.4 VGS=10V, VDS=15V, RL=1.3, RGEN=3 IF=11.5A, dI/dt=100A/s 5.1 14.4 3.7 16.9 6.6 14 18 17...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 104.83K  /  4 Page

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    AOSMD[Alpha & Omega Semiconductors]
Part No. AO4816L AO4816
OCR Text ...rrent 1.5 30 13.5 17.5 16 36 17 0.76 1 4.3 758 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 128 0.7 16.5 VGS=10V, VDS=15V, I D=8.5A 8.6 2.5 4.8 5.4 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s IF=8.5A, dI/dt=100A/s 5.1 14.4 ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 100.68K  /  4 Page

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    AOSMD[Alpha & Omega Semiconductors]
Part No. AO4832L AO4832
OCR Text ...istance TJ=125C VGS=4.5V, ID=5A 0.6 30 12.2 17 13 17.6 23 0.73 15 21 17 23 1 2.5 1 Min 30 1 5 100 1.4 Typ Max Units V A n V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC gFS VSD IS VGS=2.5V, ID=4A Forward Transconductance VDS=5V,...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 107.89K  /  4 Page

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    http://
AOSMD[Alpha & Omega Semiconductors]
Part No. AO6404L AO6404
OCR Text ...ody-Diode Continuous Current 12 0.5 30 13.4 16 14.8 18.8 25.5 36 0.73 1 2.9 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 17.9 VGS=4.5V, VDS=10V, ID=8.5A 1.5 4.7 2.5 VGS=10V, V DS=10V, R L=1.2, RGEN=3 IF=8.5A, dI/dt=100A/s...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 107.06K  /  4 Page

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For 0.17m Found Datasheets File :: 245    Search Time::2.015ms    
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