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SemeLAB
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Part No. |
2N5681
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OCR Text |
0 .3 5 ) 9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
5 .0 8 (0 .2 0 0 ) ty p .
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3... |
Description |
NPN SILICON TRANSISTORS
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File Size |
27.61K /
3 Page |
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Boca Semiconductor Corp... BOCA[Boca Semiconductor Corporation]
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Part No. |
2N5682 2N5681 2N5680 2N5679
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OCR Text |
... Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation @Ta=25 degC 5.7 Derate Above 25deg C PD 10 Power Dissipation @Tc=25 degC 57 Derate Above 25deg C Tj, Ts... |
Description |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
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File Size |
40.73K /
2 Page |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
2N5682 2N5681 4092
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OCR Text |
...0 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 o C Total Dissipation at T amb 50 o C Storage Temperature Max. Operating Junc... |
Description |
From old datasheet system SILICON NPN TRANSISTORS
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File Size |
66.64K /
4 Page |
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it Online |
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SEME-LAB[Seme LAB] Semelab(Magnatec)
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Part No. |
2N5682 2N5681 2N5681SMD
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OCR Text |
0 .3 5 ) 9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
5 .0 8 (0 .2 0 0 ) ty p .
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3... |
Description |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor NPN SILICON TRANSISTORS Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管(TO-39金属封装,用于通用、放大器、开关电路))
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File Size |
21.43K /
2 Page |
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it Online |
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Central Semiconductor
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Part No. |
2N5682 2N5681 2N5680 2N5679
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OCR Text |
...g JA JC 2N5679 2N5681 100 100 4.0 1.0 0.5 1.0 10 -65 to +200 175 17.5 2N5680 2N5682 120 120 UNITS V V V A A W W C C/W C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL ICBO ICEV ICEV ICEO ICEO IEBO BVCEO VCE(SAT) VCE(... |
Description |
Leaded Small Signal Transistor General Purpose
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File Size |
127.75K /
3 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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Part No. |
2N6255 MSC1306
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OCR Text |
...To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50%
1. Emitter 2. Base 3. Collector
TO-39 DESCRIPTION:
Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications inclu... |
Description |
From old datasheet system RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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File Size |
229.56K /
4 Page |
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it Online |
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Microsemi
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Part No. |
2N6255
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OCR Text |
...To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50%
1. Emitter 2. Base 3. Collector
TO-39 DESCRIPTION:
Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications inclu... |
Description |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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File Size |
230.06K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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Part No. |
2N6304 MSC1323
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OCR Text |
...ise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz
2 1 4 3
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
Designed primar... |
Description |
From old datasheet system RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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File Size |
84.20K /
4 Page |
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it Online |
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Microsemi
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Part No. |
2N6304
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OCR Text |
...ise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz
2 1 4 3
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
Designed primar... |
Description |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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File Size |
86.42K /
5 Page |
View
it Online |
Download Datasheet
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