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Microchip
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Part No. |
TC4421AVOA713-VAO
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OCR Text |
...nuous output current i dc 2 a 10v ? v dd ? 18v, t a =+25c ( tc4421/tc4422 cat only) ( note 3 ) latch-up protection withstand reverse current i rev > 1.5 a duty cycle ? 2%, t ? 300 sec switching time ( note 1 ) rise time t r 6 07 5n ... |
Description |
Power Management- Power MOSFET Drivers
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File Size |
717.47K /
24 Page |
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Alpha & Omega Semiconductor
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Part No. |
AOTF20N40
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OCR Text |
10v) 20a r ds(on) (at v gs =10v) < 0.25 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aotf20n40l symbol v ds the aotf20n40 is fabricated using an advanced high voltage mosfet process that is de... |
Description |
Single MV MOSFETs (40V - 400V)
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File Size |
340.58K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AONS32314
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OCR Text |
10v) 32a r ds(on) (at v gs =10v) < 8.7m r ds(on) (at v gs =4.5v) < 12.3m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.05mh c e as t j , t stg symbol t 10s steady-state stea... |
Description |
Single LV MOSFETs (12V - 30V)
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File Size |
231.85K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOTF42S60
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OCR Text |
.../dt=100a/ s,v ds =400v v v gs =10v, i d =21a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c a v ds =0v, v gs =30v v ds =600v, v gs =0v v ds =5v,i d =250 a v ds =480v, t j =150c zero gate voltage drain current ... |
Description |
Single HV MOSFETs (500V - 1000V)
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File Size |
282.90K /
6 Page |
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it Online |
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PANASONIC CORP PANASONIC[Panasonic Semiconductor]
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Part No. |
2SB1207
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OCR Text |
...BO hFE
*1
Conditions VCB = -10v, IE = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -0.4A, IB = -8mA IC = -0.4A, IB = -8mA VCB = -10v, IE = 50mA, f = 200MHz VCB = -10v, IE = 0... |
Description |
Silicon PNP epitaxial planer type(For low-voltage output amplification)
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File Size |
35.75K /
2 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOTF12T50P
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OCR Text |
...s 8 nc v ds =40v, i d =6a v gs =10v, i d =6a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters electrical characteristics (t j =25c unless otherwise noted) static p... |
Description |
Single HV MOSFETs (500V - 1000V)
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File Size |
411.08K /
6 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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Part No. |
2SB709A 2SD601A
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OCR Text |
...tions VCB = -20V, IE = 0 VCE = -10v, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10v, IC = -2mA IC = -100mA, IB = -10mA VCB = -10v, IE = 1mA, f = 200MHz VCB = -10v, IE = 0, f = 1MHz
min
typ
0 to 0.1
0.1 t... |
Description |
Silicon PNP epitaxial planer type
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File Size |
47.56K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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