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w-washing Datasheet PDF File

For w-washing Found Datasheets File :: 2500 Search Time::1.343ms
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				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
Part No.	FKPF10N80
OCR Text	...40 ~ 125 Units A A A A2s A/s W W V A C C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr 100ns Ta=25C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol R...
Description	Bi-Directional Triode Thyristor Planar Silicon Application Explanation 800 V, 10 A, TRIAC, TO-220AB
File Size	168.48K / 7 Page	View it Online	Download Datasheet

				HOLTEK[Holtek Semiconductor Inc]
Part No.	HT48R50A
OCR Text	...r u c tio n R e g is te r M U X W DTS DATA M e m o ry W D T P r e s c a le r TM R0 M U X P r e s c a le r TM R0 M U fS X YS E N /D IS WDT M U X S Y S C L K /4 MP RTC W DT OSC OSC PAC In s tr u c tio n D ecod...
Description	8-Bit Microcontroller
File Size	282.36K / 46 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M63991FP M63991
OCR Text	...0 ~ 125 Unit V V V V V V V V/ns W mW/C C/W C C C RECOMMENDED OPERATING CONDITIONS Symbol VB VS VCC VDD VIN Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage Low Side Fixed Supply Voltage Logic Supply V...
Description	HIGH VOLTAGE HALF BRIDGE DRIVER
File Size	67.09K / 8 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR6AM BCR6
OCR Text	... -40 ~ +125 2.0 Unit A A A2s W W V A C C g V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR6AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRG...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	80.34K / 5 Page	View it Online	Download Datasheet

				POWER-ONE[Power-One]
Part No.	HBS150YG-A HBS150YH-A HBS150YJ-A HBS150ZG-A HBS150ZH-A HBS150ZJ-A
OCR Text	...M 400 LFM 3.4 2.7 2.2 1.8 1.6 C/W C/W C/W C/W C/W Pin 1 2 3 4 5 6 7 8 9 Function -Vin Case On/Off +Vin -V out -Sense Trim +Sense +V out Tolerances Inches: .XX 0.020 .XXX 0.010 Pin: 0.002 (Millimeters) .X 0.5 .XX 0.25 0.05 ...
Description	HBS SERIES - 150 WATT
File Size	86.76K / 3 Page	View it Online	Download Datasheet

				Vishay Semiconductors International Rectifier
Part No.	IR15XB.. IR15XB08 IR15XB02 IR15XB04 IR15XB06
OCR Text	...Parameters TJ Tstg RthJC RthJA W T Operating and storage temperature range Max. thermal resistance junction to case Thermal resistance, junction to ambient Approximate weight Mounting Torque 7.4 (0.26) 1.0 9.0 g (oz) Nm Lb.in Bridge to Hea...
Description	DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode 15.0 Amps Single Phase Full Wave Bridge Rectifier 800V Bridge in a IR15XB package 200V Bridge in a IR15XB package 400V Bridge in a IR15XB package 600V Bridge in a IR15XB package
File Size	77.71K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRAMS10UP6 IRAMS10UP60B
OCR Text	...+150 -40 to +150 0.8 to 1.0 kHz W VRMS C Nm A Units V Note 1: Limited by current protection, see table "Inverter Section Electrical Characteristics" on page 3 www.irf.com 1 IRAMS10UP60B Internal Electrical Schematic - IRAMS10UP...
Description	Plug N DriveTM Integrated Power Module for Appliance Motor Drive
File Size	410.56K / 18 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR12CM BCR12
OCR Text	... -40 ~ +125 2.0 Unit A A A2s W W V A C C g V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VR...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE MITSUBISHISEMICONDUCTOR(TRIAC)MEDIUMPOWERUSENON-INSULATEDTYPE.PLANARPASSIVA..
File Size	80.80K / 5 Page	View it Online	Download Datasheet

For w-washing Found Datasheets File :: 2500 Search Time::1.343ms
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