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  u003d Datasheet PDF File

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    IRG4BC30KD IRG4BC30KDPBF

International Rectifier, Corp.
Part No. IRG4BC30KD IRG4BC30KDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 2.21V,@和VGE \u003d 15V的,集成电路\u003d 16A条)
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package

File Size 192.51K  /  10 Page

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    IRG4BC30U-S

International Rectifier, Corp.
Part No. IRG4BC30U-S
Description INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCES和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条)
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package

File Size 315.06K  /  8 Page

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    IRG4BC20UDS IRG4BC20UD-S IRG4BC20UD-STRR IRG4BC20UD-STRL

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC20UDS IRG4BC20UD-S IRG4BC20UD-STRR IRG4BC20UD-STRL
Description 320 x 240 pixel format, LED or CFL Backlight 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.85V,@和VGE \u003d 15V的,集成电路\u003d 6.5A
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6.5A I(C) | TO-263AB
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

File Size 233.71K  /  11 Page

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    International Rectifier, Corp.
Part No. IRFB4710
Description Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A) 功率MOSFET(减振钢板基本\u003d 100伏时,RDS(on)的最大值\u003d 0.014ohm,身份证\u003d 75A条)

File Size 245.17K  /  11 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. JANTXV2N6851 JANTX2N6851
Description POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A) 功率MOSFET P沟道(BVdss \u003d-00V,的Rds(on)\u003d 0.80ohm,身份证\u003d- 4.0a上)

File Size 196.87K  /  6 Page

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    MIL-PRF-19500/564

International Rectifier, Corp.
Part No. MIL-PRF-19500/564
Description POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) 功率MOSFET P沟道(BVdss \u003d- 100V的,的Rds(on)\u003d 0.30ohm,身份证\u003d- 6.5A

File Size 132.64K  /  7 Page

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    International Rectifier, Corp.
Part No. IRFY130CM
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A) 功率MOSFET N沟道(BVdss \u003d 100V的,的Rds(on)\u003d 0.18ohm,身份证\u003d 14.4A

File Size 294.72K  /  6 Page

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    International Rectifier, Corp.
Part No. IRF7451
Description Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 150伏时,RDS(on)的最大值\u003d 0.09ohm,身份证\u003d 3.6A

File Size 208.18K  /  8 Page

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    International Rectifier, Corp.
Part No. IRFY440CM
Description POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A) 功率MOSFET N沟道(BVdss \u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 7.0A

File Size 262.88K  /  6 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRHN8230 IRHN7230
Description TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道(BVdss \u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0

File Size 450.04K  /  14 Page

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