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  single-transistor Datasheet PDF File

For single-transistor Found Datasheets File :: 33914    Search Time::2.218ms    
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    PBSS9110X PBSS9110X-15

NXP Semiconductors
Part No. PBSS9110X PBSS9110X-15
OCR Text ...r-emitter saturation resistance single pulse; tp 1 ms IC = -1 A; IB = -100 mA [1] Conditions open base Min - Typ 170 Max -100 ...transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description emitter collector base ...
Description 100 V, 1 A PNP low VCEsat (BISS) transistor

File Size 188.97K  /  15 Page

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    PHX14NQ20T PHF14NQ20T

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. PHX14NQ20T PHF14NQ20T
OCR Text ...D = 0.5 1 0.2 0.1 0.05 0.1 0.02 single pulse 0 20 40 60 80 Ths / C 100 120 140 0.01 1E-06 1E-05 1E-04 1E...transistor PHX14NQ20T , PHF14NQ20T Drain current, ID (A) 28 24 20 16 12 8 4 0 0 2 4 6 Gate-sou...
Description N-channel TrenchMOS(TM) transistor
N-channel TrenchMOS transistor

File Size 63.99K  /  9 Page

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    PBSS4350SPN

Philips Semiconductors
Part No. PBSS4350SPN
OCR Text ...7 a i cm peak collector current single pulse; t p 1ms --5 a r cesat collector-emitter saturation resistance i c =2a; i b = 200 ma [1] - 90 ...transistor [1] pulse test: t p 300 m s; d 0.02. 2. pinning information 3. ordering information 4. m...
Description 2.7A NPN/PNP Low VCEsat (BISS) Transistor

File Size 173.50K  /  19 Page

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    NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHP18NQ20T PHB18NQ20T PHB_PHP18NQ20T_1
OCR Text ...0.02 P D tp D = tp/T 0.01 single pulse T 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 Pulse width, tp (s) ...transistor PHP18NQ20T, PHB18NQ20T Drain current, ID (A) 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 ...
Description N-channel TrenchMOS transistor(N沟道TrenchMOS 晶体管逻辑电平场效应管)
From old datasheet system
N-channel TrenchMOS(tm) transistor

File Size 95.01K  /  9 Page

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    PBSS4160PANP PBSS4160PANP-15

NXP Semiconductors
Part No. PBSS4160PANP PBSS4160PANP-15
OCR Text ...1 a i cm peak collector current single pulse; t p 1 ms - - 1.5 a tr1 (npn) r cesat collector-emitter saturation resistance i c = 0.5 a; i...transistor pbss4160panp all information provided in this document is subject to legal disclaimers. ?...
Description 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

File Size 357.24K  /  21 Page

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    PHX23NQ10T PHX23NQ10T_1 PHX23NQ10T127

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHX23NQ10T PHX23NQ10T_1 PHX23NQ10T127
OCR Text ...D = 0.5 1 0.2 0.1 0.05 0.1 0.02 single pulse 0.01 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse width, tp (s) ...transistor PHX23NQ10T 50 40 30 20 10 0 0 ID / A Threshold Voltage, VGS(TO) (V) 5 4.5 4 3.5 ...
Description 13 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor

File Size 60.46K  /  8 Page

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    PBSS304PZ

NXP Semiconductors N.V.
Part No. PBSS304PZ
OCR Text ...r-emitter saturation resistance single pulse; tp 1 ms IC = -4 A; IB = -200 mA [1] Conditions open base Min - Typ 53 Max -60 -4...transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitte...
Description 60 V, 4.5 A PNP low V_CEsat (BISS) transistor
60 V, 4.5 A PNP low VCEsat (BISS) transistor

File Size 174.25K  /  14 Page

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    PBSS9110T PBSS9110T-15

NXP Semiconductors
Part No. PBSS9110T PBSS9110T-15
OCR Text ...ted on a printed-circuit board, single-sided copper, tin-plated, standard footprint. PARAMETER collector-base voltage collector-emitter volt...transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to am...
Description 100 V, 1 A PNP low VCEsat (BISS) transistor

File Size 115.19K  /  12 Page

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    ZSCT1555

Diodes Incorporated
Part No. ZSCT1555
OCR Text SINGLE CELL TIMER ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delay...transistor is turned on. FEATURES * * * * * * * 0.9V supply operating voltage guaranteed Pi...
Description PRECISION SINGLE CELL TIMER

File Size 293.53K  /  11 Page

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    MJD148T4G MJD14811

ON Semiconductor
Part No. MJD148T4G MJD14811
OCR Text ... t 1 /t 2 d = 0.5 0.2 0.05 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.1 0.5 0.2 i c , collector current (ma) r(t), transient thermal res...transistor: average junction temperature and second breakdown. safe operating area curves indicate i...
Description NPN Silicon Power Transistor

File Size 114.35K  /  5 Page

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For single-transistor Found Datasheets File :: 33914    Search Time::2.218ms    
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LDA111STR
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