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  q-fet Datasheet PDF File

For q-fet Found Datasheets File :: 8066    Search Time::1.812ms    
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    MTM232230LBF

Panasonic Semiconductor
Part No. MTM232230LBF
OCR Text ...= 25 ? c note) *1 pulse width Q 10 ? s, duty cycle Q 1 % *2 measuring on ceramic board at 40 ? 38 ? 0.1 mm absolute maximum rating p...fet ? features ? low drain-source on-state resistance : rds(on) typ = 20 m ? (vgs = 4.0 v) for swi...
Description Silicon N-channel MOS FET

File Size 366.44K  /  7 Page

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    PHN203

NXP Semiconductors N.V.
Part No. PHN203
OCR Text ...s Coss Crss 2 0 0 5 10 Q G (nC) 15 10 10-1 1 10 VDS (V) 102 Fig 11. Gate-source voltage as a function of gate cha...FET 30 VGS = 0 V IS (A) 20 03ae51 10 150 C Tj = 25 C 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig ...
Description Dual N-channel TrenchMOS logic level FET 双N沟道TrenchMOS逻辑电平场效应管

File Size 185.17K  /  13 Page

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    PSMN009-100P

NXP Semiconductors N.V.
Part No. PSMN009-100P
OCR Text ...d TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 b(3x) e e c ...FET 8. Revision history Table 7. Revision history Release date 20090930 Data sheet status Produc...
Description N-channel TrenchMOS SiliconMAX standard level FET

File Size 176.38K  /  13 Page

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    TY Semiconductor Co., Ltd
Part No. PMV45EN
OCR Text ...4554m ? dynamic characteristics q g(tot) total gate charge i d =3a; v ds =15v; v gs =10v; t j =25c; see figure 11 -9.4-nc q gs gate-source charge - 1.2 - nc q gd gate-drain charge - 1.9 - nc c iss input capacitance v ds =30v; v gs = 0 v; ...
Description N-channel TrenchMOS logic level FET Logic-level compatible Very fast switching

File Size 240.26K  /  3 Page

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    MIP301

PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
Part No. MIP301
OCR Text q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method) unit: mm 0.60.3 0.40.25 1 2 3 4 8 5.00.3 1.50.2 4.20.3 6.50.3 7 6 5 s Applications...
Description    Silicon MOS IC

File Size 32.11K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. PMV40UN
OCR Text ...5573m w dynamic characteristics q g(tot) total gate charge i d = 1 a; v dd =15v; v gs = 4.5 v; figure 13 - 9.3 - nc q gs gate-source charge - 0.7 - nc q gd gate-drain (miller) charge - 2.2 - nc c iss input capacitance v gs =0v; v ds = 30 v;...
Description TrenchMOS ultra low level FET Battery management

File Size 108.13K  /  3 Page

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    MTD6N10E

ON Semiconductor
Part No. MTD6N10E
OCR Text ...i d = 6.0 adc, v gs = 10 vdc) q t ? 10 14 nc q 1 ? 3.3 ? q 2 ? 4.3 ? q 3 ? 5.5 ? source ? drain diode characteristics forward on ? voltage...fet input capacitance can be charged by current from the generator. the published capacitance data i...
Description 6 Amp DPAK Surface Mount Products, N-Channel, VDSS 100

File Size 257.34K  /  10 Page

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    BUK7E4R6-60E

NXP Semiconductors
Part No. BUK7E4R6-60E
OCR Text ...6 4.6 m dynamic characteristics q gd gate-drain charge i d = 25 a; v ds = 48 v; v gs = 10 v; fig. 13 ; fig. 14 - 26.1 - nc [1] continuou...fet buk7e4r6-60e all information provided in this document is subject to legal disclaimers. ? nxp b....
Description N-channel TrenchMOS standard level FET

File Size 208.05K  /  12 Page

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    PHP110NQ06LT

NXP Semiconductors
Part No. PHP110NQ06LT
OCR Text ...d TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 b(3x) e e c ...FET 8. Revision history Table 7. Revision history Release date 20100304 Data sheet status Produc...
Description    N-channel TrenchMOS logic level FET

File Size 200.77K  /  13 Page

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