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ST Microelectronics
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Part No. |
STGB8NC60KD
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OCR Text |
...ak / to-220 short circuit rated powermesh? igbt features lower on voltage drop (v cesat ) lower c res / c ies ratio (no cross-conduction susceptibility) very soft ultra fast recovery antiparallel diode short circuit withstand time 1... |
Description |
(STGx8NC60KD) Short circuit rated powermesh IGBT
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File Size |
460.63K /
18 Page |
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it Online |
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ST Microelectronics
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Part No. |
STGW39NC60VD
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OCR Text |
...0v - to-247 very fast switching powermesh? igbt general features low c res / c ies ratio (no cross conduction susceptibility) high frequency operation very soft ultra fast recovery anti parallel diode description using the latest high... |
Description |
N-CHANNEL IGBT
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File Size |
290.37K /
13 Page |
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it Online |
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ST Microelectronics
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Part No. |
B9NC60
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OCR Text |
powermesh?ii mosfet (1)i sd 9a, di/dt 100a/s, v dd v (br)dss , t j t jmax n typical r ds (on) = 0.6 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description t... |
Description |
Search --To STB9NC60
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File Size |
399.60K /
10 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
P5NC50
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OCR Text |
powermesh?ii mosfet n typical r ds (on) = 1.3 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh o... |
Description |
Search --To STP5NC50
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File Size |
476.45K /
12 Page |
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it Online |
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ST Microelectronics
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Part No. |
STD6NC40
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OCR Text |
powermesh?ii mosfet (1)i sd 5a, di/dt 100a/s, v dd v (br)dss , t j t jmax. n typical r ds (on) = 0.75 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n add suffix t4 for ordering in tape & r... |
Description |
N-CHANNEL POWER MOSFET
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File Size |
380.74K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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