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igbt mos Datasheet PDF File

For igbt mos Found Datasheets File :: 1141 Search Time::1.719ms
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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	TD310 TD310D TD310I TD310N TD310IN TD310ID 4470
OCR Text	igbt/mos DRIVER . . . . . . . . . . . . . . THREE POWER igbt/mos AND PULSE TRANSFORMER DRIVERS CURRENT SENSE COMPARATOR WITH 1ms INHIBITION TIME FUNCTION INSTANTANEOUS SIGNAL TRANSMISSION 0.6 Amp PER CHANNEL PEAK OUTPUT CURRENT CAPABI...
Description	TRIPLE igbt/mos DRIVER From old datasheet system
File Size	81.13K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	L6387D L6387 L6387DTR
OCR Text	... NUMBERS: L6387D L6387 igbt. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMO...mos can be seen as an equivalent capacitor. This capacitor CEXT is related to the mos total gate cha...
Description	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
File Size	132.01K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics 意法半导
Part No.	L4981B L4981A L4981 L4981X L4981XD
OCR Text	...ss 1A useful to drive mosFET or igbt power stages. Description 4 5 6 IAC CA-OUT LFF 7 VRMS 8 9 10 11 12 MULT-OUT ISENSE S-...mos 2 8 5 R21 R5 C3 R4 RS 9 18 10 17 D5 R17 R2 R10 R11 R3 ...
Description	POWER FACTOR CORRECTOR
File Size	228.15K / 17 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CT20AS-8
OCR Text	...Xe CM Vtrig + - VCM igbt GATE VG VOLTAGE RG VCE VG igbt Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = ...mos structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suf...
Description	Multipole Connector 频闪闪光器使 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
File Size	30.40K / 2 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CT20ASJ-8
OCR Text	...Xe CM Vtrig + - VCM igbt GATE VG VOLTAGE RG VCE VG igbt Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V ICP = 120A CM =...mos structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suf...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
File Size	30.15K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CT20ASL-8
OCR Text	...AL CM Vtrig + - VCM igbt GATE VG VOLTAGE RG VCE VG igbt Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 300V IP = 120A CM = ...mos structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suf...
Description	STROBE FLASHER USE 频闪闪光器使
File Size	22.67K / 2 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	L6598 L6598D
OCR Text	...ng to the external Power mos or igbt. An high sink/source driving current (450/250 mA typ) ensure fast switching times also when size4 Power mos are used. The internal logic ensures a minimum dead time to avoid cross-conduction of the power...
Description	HIGH VOLTAGE RESONANT CONTROLLER 高压谐振控制
File Size	113.10K / 16 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	AD9623 AD9621
OCR Text	igbt Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES VCGR VCES VGE...mos Gate turn-on - drive simplicity Applications ! AC motor speed control ! DC servo and robot drive...
Description	Wideband Voltage Feedback Amplifier
File Size	42.87K / 2 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	L6560A L6560AD L6560D L6560
OCR Text	...ge able to drive a POWER mos or igbt devices with source and sink current of 400mA. The chip works in transition mode and is particularly intended for lamp ballast applications and for low power SMPS. June 2000 1/11 L6560 - L6560A ...
Description	POWER FACTOR CORRECTOR
File Size	122.37K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HGTG30N60A4D
OCR Text	igbt with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a mos gated high voltage switching devices combining the best features of mosFETs and bipolar transistors. This device has the high input impedance of a mosFET and the low on-stat...
Description	600V, SMPS Series N-Channel igbt with Anti-Parallel Hyperfast Diode 600V/ SMPS Series N-Channel igbt with
File Size	116.30K / 9 Page	View it Online	Download Datasheet

For igbt mos Found Datasheets File :: 1141 Search Time::1.719ms
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