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ERICSSON POWER MODULES AB Ericsson Microelectronics
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Part No. |
PTF10020
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Description |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
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File Size |
313.64K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
HN1K05FU
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Description |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
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File Size |
117.18K /
5 Page |
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it Online |
Download Datasheet |
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PMC-Sierra, Inc. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3387
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Description |
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) 东芝场效应晶体管频道马鞍山型(二π- MOSV From old datasheet system
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File Size |
204.73K /
6 Page |
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it Online |
Download Datasheet |
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ERICSSON[Ericsson] Ericsson Microelectronics
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Part No. |
PTF10007
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Description |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
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File Size |
234.16K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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