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  e-amps adc. Datasheet PDF File

For e-amps adc. Found Datasheets File :: 3095    Search Time::2.546ms    
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    MOTOROLA[Motorola, Inc]
Part No. MGY30N60D
OCR Text ...OLTS SHORT CIRCUIT RATED G G E C E CASE 340G-02, Style 5 TO-264 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector...AMPS) VGE = 20 V 17.5 V 40 15 V 12.5 V IC, COLLECTOR CURRENT (AMPS) 10 V 60 TJ = 125C VGE = 20 V 17....
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode

File Size 254.37K  /  6 Page

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    MOTOROLA[Motorola, Inc]
Part No. MGY40N60D
OCR Text ... VOLTS SHORT CIRCUIT RATED G E G C E CASE 340G-02, Style 5 TO-264 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Coll...AMPS) 60 VGE = 20 V 17.5 V 12.5 V IC, COLLECTOR CURRENT (AMPS) 15 V 10 V 60 80 TJ = 125C VGE = 20 V ...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode

File Size 246.87K  /  6 Page

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    NID5003NT4G

ON Semiconductor
Part No. NID5003NT4G
OCR Text ... apk, l = 120 mh, r g = 25 ) e as 400 mj operating and storage temperature range (note 3) t j , t stg ? 55 to 150 c stresses exceeding m...amps) 15 5 0 figure 1. on ? region characteristics 12 5 4 0 figure 2. transfer characteristics v gs ...
Description Self-Protected FET with Temperature and Current Limit

File Size 104.10K  /  5 Page

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    MOTOROLA[Motorola, Inc]
Part No. MGY40N60
OCR Text ...OLTS SHORT CIRCUIT RATED G G E C E CASE 340G-02, Style 5 TO-264 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Col...AMPS) 60 VGE = 20 V 17.5 V 12.5 V IC, COLLECTOR CURRENT (AMPS) 15 V 10 V 60 80 TJ = 125C VGE = 20 V ...
Description Insulated Gate Bipolar Transistor

File Size 205.43K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MJ15016G 2N3055A 2N3055A_06 2N3055AG MJ15015 MJ15015G MJ15016 2N3055A06
OCR Text ...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. ORDERING INFORMATION Device 2N3055A 2N3055AG MJ15015 MJ15015G MJ15016 MJ15016G The data of Figures 12 and 13 is b...
Description Complementary Silicon High-Power Transistors

File Size 85.91K  /  6 Page

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    Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. MJ3281A NH1302A
OCR Text ...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, th...
Description 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR

File Size 221.46K  /  6 Page

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    BSS138L BVSS138LT1G

ON Semiconductor
Part No. BSS138L BVSS138LT1G
OCR Text ...e material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom...
Description Power MOSFET 200 mA, 50 V

File Size 105.36K  /  5 Page

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    MTE30N50E ON2533 MTE30N50E_D

ON Semi
Motorola, Inc
Part No. MTE30N50E ON2533 MTE30N50E_D
OCR Text E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high ener...AMPS) 50 40 30 20 10 4V 0 0 4 8 2 6 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 12 0 2 2.5 6V VGS = 10 V...
Description N?Channel Enhancement?Mode Silicon Gate
From old datasheet system
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

File Size 228.81K  /  8 Page

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    NTGS3455T107 NTGS3455T1G NTGS3455T1

ONSEMI[ON Semiconductor]
Part No. NTGS3455T107 NTGS3455T1G NTGS3455T1
OCR Text ...and Battery-Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) ...Amps Amps Watts Amps 1 TSOP-6 CASE 318G STYLE 1 GATE 3 4 SOURCE MARKING DIAGRAM & PIN ASSIGNME...
Description MOSFET -3.5 Amps, -30 Volts

File Size 101.54K  /  5 Page

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    NJVNJD2873T4G

ON Semiconductor
Part No. NJVNJD2873T4G
OCR Text ...toff current (v cb = 50 vdc, i e = 0) i cbo ? 100 nadc emitter cutoff current (v be = 5 vdc, i c = 0) i ebo ? 100 nadc on characteristic...amps) v ce(sat) , collector ? emitter saturation voltage (v) ic/ib = 20 ? 40 c 1.2 0.01 0.1 1 10 i ...
Description NPN Silicon DPAK For Surface Mount Applications

File Size 105.19K  /  5 Page

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