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OPNEXT[Opnext. Inc.]
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| Part No. |
HE8811_06
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| OCR Text |
double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment. ODE-208-051 (Z) Rev.0 Oct. 30, 2006
Featur... |
| Description |
GaAlAs Infrared Emitting Diode
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| File Size |
86.43K /
4 Page |
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OPNEXT[Opnext. Inc.]
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| Part No. |
HE8811
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| OCR Text |
... infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment.
Features
... |
| Description |
GaAlAs Infrared Emitting Diode
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| File Size |
182.93K /
6 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HE8812SG
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| OCR Text |
double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
* High efficiency and high output power
Package Type * HE88... |
| Description |
GaAlAs Infrared Emitting Diode
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| File Size |
139.15K /
6 Page |
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it Online |
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OPNEXT[Opnext. Inc.]
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| Part No. |
HE8812SG
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| OCR Text |
double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. ODE-208-052 (Z) Rev.0 Oct. 30, 2006
Features
* High efficiency and hi... |
| Description |
GaAlAs Infrared Emitting Diode
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| File Size |
85.78K /
4 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62703-Q3828 Q62703-Q3827 Q62703-Q3826 LH5424 LH5424-QT LH5424-S LH5424-SU LH5424-T Q62703-Q2242
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| OCR Text |
...q q q
colored, clear package double heterojunction in GaAIAs technology especially high luminous intensity solder leads without stand-off available taped on reel load dump resistant acc. to DIN 40839
Typ Type
Emissionsfarbe Color o... |
| Description |
5 mm T1 3/4 LED, Non Diffused Super-Bright, Hyper-Red GaAIAs-LED T-1 3/4 SINGLE COLOR LED, HYPER RED, 5 mm
5 mm T1 3/4 LED Non Diffused Super-Bright Hyper-Red GaAIAs-LED
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| File Size |
284.88K /
7 Page |
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it Online |
Download Datasheet |
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hitachi
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| Part No. |
HE8812SG
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| OCR Text |
double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
* High efficiency, high output
Absolute Maximum Ratings (... |
| Description |
GaAlAs Infrared Emitting Diodes
From old datasheet system
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| File Size |
18.10K /
3 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62703-Q3493 LHK376 LHK376-QS LHK376-R LHK376-RT LHK376-S Q62703-Q3304 Q62703-Q3305 Q62703-Q3492
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| OCR Text |
...s
q colorless, clear package q double heterojunction in GaAIAs technology, transparent q q q q q q q
substrate plasic package with a special design in connection with an additional, custom built reflector suitable for backlighting of di... |
| Description |
Hyper ARGUS LED Hyper-Bright/ 3 mm T1/ TS GaAIAs LED/ Non Diffused
Hyper ARGUS LED Hyper-Bright, 3 mm T1, TS GaAIAs LED, Non Diffused SINGLE COLOR LED, HYPER RED, 3 mm
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| File Size |
245.35K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
QEB441 QEB441TR
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| OCR Text |
... 730 nm * Chip Material: AlGaAs double heterojunction * Surface Mount PLCC-2 package * Wide Emission Angle, 120 * High Power * Tape and Reel option: .TR
2001 Fairchild Semiconductor Corporation DS300196 5/14/01
1 OF 4
www.fairchil... |
| Description |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE
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| File Size |
85.56K /
4 Page |
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it Online |
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Price and Availability
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