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Fairchild Semiconductor, Corp.
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| Part No. |
IRFS840A
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| OCR Text |
... oC o < 3 _ _ O ISD <8A, di/dt <160a/ s, VDD _ BVDSS , Starting T J =25 C _ 4 Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% O 5 O Essent...40v 0 DS
Capacitance
10 00 @Nts: oe 1 V =0V . GS 2 f=1Mz . H
5
50 0
C oss C rss
@N... |
| Description |
N-Channel Power MOSFET00V.85Ω.6AN沟道功率MOS场效应管（漏源电00V，导通电.85Ω，漏电流4.6A 4.6 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
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| File Size |
262.96K /
7 Page |
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
PQ160QH04N
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| OCR Text |
160a/40v
PQ160QH04N
OUTLINE DRAWING
* Four-Arms, Cathode Common to Base Plate * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* High Fr... |
| Description |
SBD MODULE 160a/40v
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| File Size |
55.42K /
2 Page |
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it Online |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CT30VS-8
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| OCR Text |
...MMEND CONDITION VCM = 330V IP = 160a CM = 800F VGE = 28V
MAXIMUM CONDITION 360V 180A 1000F
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate curren... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
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| File Size |
26.40K /
2 Page |
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it Online |
Download Datasheet |
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