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Diodes
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| Part No. |
ZXTN25040DFHTA
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| OCR Text |
... <1 - 50 20 na a v cb = 100v v cb = 100v, t a = 100c collector-emitter cut-off current i cex - - 100 na v ce = 100v; r be ...4a, v ce = 2v i c = 10a, v ce = 2v collector-emitter saturation voltage v ce(sat) - 45 120... |
| Description |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
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| File Size |
196.27K /
7 Page |
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Zetex Semiconductors
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| Part No. |
FZT951 FZT953
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| OCR Text |
...A, RB1k IC=-10mA* IE=-100A VCB=-100v VCB=-100v, Tamb=100C VCB=-100v VCB=-100v, Tamb=100C VEB=-6V IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4a, IB=-400mA* IC=-4a, IB=-400mA* IC=-4a, VCE=-1V* IC=-10mA, VCE=-1V* IC=-1A, VC... |
| Description |
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
From old datasheet system
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| File Size |
94.61K /
5 Page |
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it Online |
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SemeLAB
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| Part No. |
2N6796LCC4
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| OCR Text |
...
N-CHANNEL POWER MOSFET
VDSS = 100v = 7.4a
11
7.62 (0.300) 7.12 (0.280)
17 18 1 2
0.76 (0.030) 0.51 (0.020)
10 9 8
ID
7
6
5
4
3
1.65 (0.065) 1.40 (0.055)
0.33 (0.013) Rad. 0.08 (0.003)
RDS(ON) = 0.18
... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
25.13K /
3 Page |
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it Online |
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Infineon
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| Part No. |
SKP02N120
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| OCR Text |
... withstand time 1) v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 62 w operating junction a...4a 6a 8a 10a 12a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0.1a 1a 10a dc... |
| Description |
IGBTs & DuoPacks - 2A 1200V TO220AB IGBT Diode
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| File Size |
376.02K /
13 Page |
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it Online |
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WINGS[Wing Shing Computer Components]
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| Part No. |
2SD1886
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| OCR Text |
...6KHz IC=4a,IB1=-1/2IB2=1.2A,VCC=100v
1.0
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage(open collector) Co... |
| Description |
SILICON DIFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
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| File Size |
84.33K /
1 Page |
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it Online |
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SEME-LAB[Seme LAB]
Semelab(Magnatec)
TT electronics Semelab Limited
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| Part No. |
BDS12IG BDS10IG BDS11IG
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| OCR Text |
... 80V 80V 5V 15A 5A 90W
BDS12 100v 100v
-65 TO 200C 200C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:...4a VCC = 30V IB1 = 0.4a IC = 4a VCC = 30V IB1 = -IB2 = 0.4a
Max.
0.7 1.0 0.8
Unit ms ms ms
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| Description |
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN澶?欢????朵?绠?TO257???灏??))
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶体TO257金属封装)) 硅npn型Epitiaxial基地晶体TO257金属包（npn型外延型硅晶体管TO257金属封装））
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| File Size |
14.52K /
2 Page |
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it Online |
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