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  to-261aa Datasheet PDF File

For to-261aa Found Datasheets File :: 151    Search Time::3.031ms    
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    BCP56-10T1 BCP56-16T1 ON0172 BCP56-10T3

MOTOROLA INC
ON Semiconductor
Part No. BCP56-10T1 BCP56-16T1 ON0172 BCP56-10T3
OCR Text ...ating the possibility of damage to the die * Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to ...261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collect...
Description 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, to-261aa
From old datasheet system
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

File Size 142.31K  /  6 Page

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    BF720T1

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. BF720T1
OCR Text ...rent Total Power Dissipation up to TA = 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value 30...261AA) DEVICE MARKING DC THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junc...
Description NPN Ssilicon Transistor

File Size 110.03K  /  6 Page

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    IRFL9014

International Rectifier
Part No. IRFL9014
OCR Text ...mproved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surfac...261AA) Outline Part Marking Information SOT-223 E X A M P L E : TH IS IS A N IR F L 0 1 4 W AFE...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.8A)

File Size 219.05K  /  8 Page

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    IRFL4105 IRFL4105TR

IRF[International Rectifier]
Part No. IRFL4105 IRFL4105TR
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...261AA) Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 W A FE...
Description 3.7 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, to-261aa
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

File Size 164.94K  /  9 Page

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    MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1
OCR Text ...OS medium power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offer...261AA Value 60 15 1.2 4.8 0.8 6.4 - 65 to 150 108 Unit Vdc Adc Watts mW/C C mJ DEVICE MARKI...
Description 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, to-261aa
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS

File Size 176.21K  /  10 Page

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    PZT2222AT1 PZT2222AT1_D ON2778 PZT2222AT1D PZT2222AT1G PZT2222AT3 PZT2222AT3G PZT2222AT1/D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
Part No. PZT2222AT1 PZT2222AT1_D ON2778 PZT2222AT1D PZT2222AT1G PZT2222AT3 PZT2222AT3G PZT2222AT1/D
OCR Text ...ating the possibility of damage to the die. * Available in 12 mm tape and reel Use PZT2222AT1 to order the 7 inch/1000 unit reel. Use PZT222...261AA MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Volta...
Description SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, to-261aa
From old datasheet system

File Size 136.30K  /  6 Page

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    BSP52T1 ON0221

Motorola, Inc.
ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. BSP52T1 ON0221
OCR Text ...ating the possibility of damage to the die * Available in 12 mm Tape and Reel Use BSP52T1 to order the 7 inch/1000 unit reel Use BSP52T3 to ...261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collect...
Description From old datasheet system
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

File Size 113.31K  /  6 Page

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    MMFT960T1 MMFT960T1_D ON2232

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MMFT960T1 MMFT960T1_D ON2232
OCR Text ...ating the possibility of damage to the die. * Available in 12 mm Tape and Reel Use MMFT960T1 to order the 7 inch/1000 unit reel Use MMFT960T...261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-S...
Description From old datasheet system
N-hannel Enhancement-ode Silicon Gate
MEDIUM POWER TMOS FET 300 mA 60 VOLTS

File Size 119.96K  /  6 Page

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    IRSF3031

IRF[International Rectifier]
Part No. IRSF3031
OCR Text ...Current Protection Active Drain-to-Source Clamp ESD Protection Compatible with Standard Power MOSFET Low Operating Input Current Monolithic ...261AA LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain To Order Previous Datasheet I...
Description FULLY PROTECTED DMOS POWER SWITCH(Vds=50V, Rds(on)=200mohm)

File Size 263.14K  /  5 Page

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    IRLL024N IRLL024NPBF IRLL024NTR

IRF[International Rectifier]
Part No. IRLL024N IRLL024NPBF IRLL024NTR
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...261AA) Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 W A FE...
Description 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, to-261aa

File Size 113.26K  /  8 Page

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