Part Number Hot Search : 
BYW172G LQ150X P60NF0 BA4028B SL8454 PD8932 LM108 LC56F
Product Description
Full Text Search
  tmos Datasheet PDF File

For tmos Found Datasheets File :: 712    Search Time::1.75ms    
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTP2P50 MTP2P50E ON2583

MOTOROLA[Motorola, Inc]
Part No. MTP2P50 MTP2P50E ON2583
OCR Text tmos E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In a...
Description From old datasheet system
tmos POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

File Size 230.76K  /  8 Page

View it Online

Download Datasheet





    MTP3055VL MTP3055VL_D ON2587

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055VL MTP3055VL_D ON2587
OCR Text tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description tmos POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
From old datasheet system

File Size 161.53K  /  8 Page

View it Online

Download Datasheet

    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description tmos POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM tmos是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

View it Online

Download Datasheet

    MTP30N06VL MTP30N06VL_D ON2590

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP30N06VL MTP30N06VL_D ON2590
OCR Text tmos V Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt...
Description From old datasheet system
tmos POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

File Size 207.41K  /  8 Page

View it Online

Download Datasheet

    MTP30P06 MTP30P06V MTP30P06V_D ON2592

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text tmos V Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt...
Description tmos POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM tmos是功率场效应晶体00安培的RDSon)\u003d 0.080欧姆
From old datasheet system

File Size 190.77K  /  8 Page

View it Online

Download Datasheet

    MTP40N10E ON2608 ON2607

Motorola, Inc
Part No. MTP40N10E ON2608 ON2607
OCR Text tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-...
Description tmos POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM
From old datasheet system

File Size 157.60K  /  8 Page

View it Online

Download Datasheet

    MTP50N06EL MTP50N06

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50N06EL MTP50N06
OCR Text tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-...
Description tmos POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
tmos POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 232.16K  /  8 Page

View it Online

Download Datasheet

    MTP50N06VL MTP50N06VL_D ON2618 MTP50N06

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06VL MTP50N06VL_D ON2618 MTP50N06
OCR Text tmos V Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt...
Description From old datasheet system
tmos POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

File Size 195.44K  /  8 Page

View it Online

Download Datasheet

    MTP50N06 MTP50N06V MTP50N06V_D ON2619

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06 MTP50N06V MTP50N06V_D ON2619
OCR Text tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description From old datasheet system
tmos POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 179.25K  /  8 Page

View it Online

Download Datasheet

    MTP50P03HDL ON2621 ON2620

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50P03HDL ON2621 ON2620
OCR Text ...L Motorola Preferred Device tmos POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Volta...
Description tmos POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 128.25K  /  8 Page

View it Online

Download Datasheet

For tmos Found Datasheets File :: 712    Search Time::1.75ms    
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of tmos
Newark

Part # Manufacturer Description Price BuyNow  Qty.
REFFRIDGED111TMOSTOBO1
52AJ5824
Infineon Technologies AG Ref Design Brd, Refrigerator Compressor Rohs Compliant: Yes |Infineon REFFRIDGED111TMOSTOBO1 1: USD213.06
BuyNow
3

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
TMOS00-03 FOR TMOS 221004 EVK-WHITE
3929-TMOS00-03FORTMOS221004EVK-WHITE-ND
Fresnel Factory Inc SENSOR OPT IR LENS DIA 10 1000: USD4.242
500: USD4.545
100: USD4.848
25: USD5.6056
10: USD6.06
1: USD7.58
BuyNow
167
TMOS63-10 FOR TMOS 221004 EVK-WHITE
3929-TMOS63-10FORTMOS221004EVK-WHITE-ND
Fresnel Factory Inc SENSOR OPT TMOS IR LENS DIA 10M 1000: USD4.242
500: USD4.545
100: USD4.848
25: USD5.6056
10: USD6.06
1: USD7.58
BuyNow
166
TMOS10-12030 FOR STHS34PF80 EVK-WHITE
3929-TMOS10-12030FORSTHS34PF80EVK-WHITE-ND
Fresnel Factory Inc SENSOR OPT TMOS IR FOC LEN 10MM 1000: USD4.242
500: USD4.545
100: USD4.848
25: USD5.6056
10: USD6.06
1: USD7.58
BuyNow
87
REFFRIDGED111TMOSTOBO1
448-REFFRIDGED111TMOSTOBO1-ND
Infineon Technologies AG REF BOARD FRIDGE_D111T_MOS 1: USD204.88
BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
REFFRIDGED111TMOSTOBO1
726-REFFRIDD111TMOS1
Infineon Technologies AG Power Management IC Development Tools REF_FRIDGE_D111T_MOS 1: USD209.73
BuyNow
3
FA11206_TINA-M
928-FA11206TMOSL
LEDIL LED Lighting Lenses Assemblies OSRAM OSLON SSL SNGL LENS HLDR & TAPE 1: USD3.68
10: USD2.6
25: USD2.36
144: USD2.26
288: USD1.8
432: USD1.78
864: USD1.74
2448: USD1.69
4896: USD1.63
BuyNow
190

RS

Part # Manufacturer Description Price BuyNow  Qty.
F073219 (ALTERNATE: GITMOS020000HA20 L000X00)
72265626
GEFRAN spa Top single/dual axis inclinometer (XY/360) | Gefran F073219 1: USD428.48
RFQ
0
F073150 (ALTERNATE: GITMOS045000HC10 0000X00)
72265629
GEFRAN spa Top single/dual axis inclinometer (XY/360) | Gefran F073150 1: USD459.9
RFQ
0
F073218 (ALTERNATE: GITMOS085000HA20 L000X00)
72265632
GEFRAN spa Top single/dual axis inclinometer (XY/360) | Gefran F073218 1: USD428.48
RFQ
0

TTI

Part # Manufacturer Description Price BuyNow  Qty.
VO3120-X007T
VO3120-X007T
Vishay Intertechnologies Optically Isolated Gate Drivers 2.5A Current Out IGBT/MOSFET Drvr 1000: USD0.9
2000: USD0.86
5000: USD0.84
10000: USD0.83
BuyNow
9000
SSM6K513NU,LF
SSM6K513NULF
Toshiba America Electronic Components MOSFETs SMALL SIGNAL MOSFET 3000: USD0.135
6000: USD0.133
9000: USD0.13
24000: USD0.128
30000: USD0.125
BuyNow
15000
TPN1600ANH,L1Q
TPN1600ANHL1Q
Toshiba America Electronic Components MOSFETs N-CH DTMOS VII-H 42W 1230PF 36 5000: USD0.33
10000: USD0.324
20000: USD0.318
BuyNow
5000
SSM3K361R,LF
SSM3K361RLF
Toshiba America Electronic Components MOSFETs SMALL-SIGNAL NCH MOSFET 3000: USD0.149
6000: USD0.146
9000: USD0.143
24000: USD0.14
30000: USD0.138
BuyNow
33000
TK31V60X,LQ
TK31V60XLQ
Toshiba America Electronic Components MOSFETs MOSFET TRAN DTMOS 2500: USD2.4
BuyNow
7500

Ameya Holding Limited

Part # Manufacturer Description Price BuyNow  Qty.
REFFRIDGED111TMOSTOBO1
Infineon Technologies AG Infineon MOSFET栅极驱动器参考设计, 电源,电动机和机器人开发工具, IPN60R1K0PFD7S芯片 RFQ
6

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.98895502090454