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Samsung Electronic Samsung Semiconductor Co., Ltd. Data Device, Corp. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
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OCR Text |
...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) * DQM for mas...Leaded, -BXXX : Lead Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4M28163PF is 134,217,728 bi... |
Description |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
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File Size |
111.60K /
12 Page |
View
it Online |
Download Datasheet |
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HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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Part No. |
HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V281620ETP-5 HY57V281620ETP-6 HY57V281620ETP-H HY57V281620ELT-7 HY57V281620ELTP-7 HY57V281620ELTP-H HY57V281620ET HY57V281620ET-5 HY57V281620ET-7 HY57V281620ETP-7 HY57V281620ELT-6 HY57V281620ELT-H HY57V281620ELTP-5 HY57V281620ELTP-6 HY57V281620ET-6 HY57V281620ET-H
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OCR Text |
...3 Clocks * * * Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page f...Leaded. HY57V281620ELT Series: Low power, Leaded. HY57V281620ETP Series: Normal power, Lead Free. HY... |
Description |
SDRAM - 128Mb 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
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File Size |
119.76K /
13 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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