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  sa-110 Datasheet PDF File

For sa-110 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    TDA3654 TDA3654Q

19
PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. TDA3654 TDA3654Q
Description Vertical deflection and guard circuit 110 Philips
Vertical deflection and guard circuit 110∑
Vertical deflection and guard circuit 110°

File Size 118.22K  /  14 Page

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    Analog Devices, Inc.
Part No. AD9883A/PCB AD9883AKST-110 AD9883ABST-110 AD9883ABST-RL140 AD9883AKSTZ-140 AD9883AKSTZ-110 AD9883AKST-140 AD9883ABST-140 AD9883A-15
Description    110 MSPS/140 MSPS Analog Interface for Flat Panel Displays
110 MSPS/140 MSPS Analog Interface for Flat Panel Displays 110 MSPS/140 MSPS的模拟接口的平板显示

File Size 218.90K  /  28 Page

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    VISHAY INTERTECHNOLOGY INC
Part No. 110MT120KPBF 110MT140KPBF
Description 3 PHASE, 110 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE

File Size 161.12K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75829D3S HUF75829D3 HUF75829D3ST
Description 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET
18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFET
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET

File Size 189.21K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA75829D3S HUFA75829D3 HUFA75829D3ST
Description    18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs
18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFETs

File Size 189.57K  /  10 Page

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    Spansion, Inc.
Part No. S29GL256N10TAIV12 S29GL128N10TAI022 S29GL128N11TAIV13 S29GL128N90TAI010
Description 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56

File Size 972.54K  /  100 Page

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    MRF9100R3 MRF9100 MRF9100SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF9100R3 MRF9100 MRF9100SR3
Description GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs

File Size 390.38K  /  12 Page

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    ABASHED 0190170001 AA-2131

Molex Electronics Ltd.
Part No. ABASHED 0190170001 AA-2131
Description InsulKrimp Quick Disconnect, Female, for 18-22 (0.80-0.35) Wire, Box, Tab 2.79mm(.110
InsulKrimp垄芒 Quick Disconnect, Female, for 18-22 (0.80-0.35) Wire, Box, Tab 2.79mm(.110

File Size 2,076.97K  /  3 Page

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    PH1214-110M

Vishay Intertechnology, Inc.
MACOM[Tyco Electronics]
Part No. PH1214-110M
Description Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 110瓦特,1.20 - 1 .40千兆赫,150毫秒脉冲10%的

File Size 51.99K  /  2 Page

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    Spansion Inc.
Spansion, Inc.
Part No. S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS064J0PBAW000 S29NS064J0PBAW002 S29NS064J0PBAW003 S29NS128J0PBAW00 S29NS128J0PBAW000 S29NS128J0PBAW002 S29NS032JPLBFW000 S29NS032JPLBFW002 S29NS032JPLBFW003 S29NS064J0LBFW00 S29NS032JPLBJW000 S29NS032JPLBAW002 S29NS064JPLBFW000 S29NS064JPLBFW003 S29NS032J0PBJW003 S29NS064JPLBJW002
Description 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写,突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44

File Size 806.60K  /  85 Page

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