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International Business Machines, Corp.
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Part No. |
IBM13M8734HCC
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OCR Text |
...in buffered mode (rege pin tied low) where the input signals pass through the regis- ter/buffer to the sdram devices on the same clock. xtk ...latency and burst type/length/operation type must be programmed into the dimm by address inputs a0-a... |
Description |
8M x 72 1 Bank Registered/Buffered SDRAM Module(8M x 72 1组寄缓冲同步动态RAM模块) 8米72 1银行注册/缓冲内存模组米72 1组寄缓冲同步动态内存模块)
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File Size |
186.72K /
21 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
M390S3253DTU
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OCR Text |
low profile registered dimm pin names * these pins are not used in this module. ** these pins should be nc in the system which d...latency (access from column address) burst length (1, 2, 4, 8 & full page) data scramble (s... |
Description |
32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
186.92K /
12 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
M390S3253DT1
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OCR Text |
...oing edge of the clk with ras low. enables row access & precharge. cas column address strobe latches column addresses on the positive goin...latency(refer to *1) =2clk+1clk dq qa0 qa1 qa2 qa3 db0 db1 db2 db3 precharge command cas latency(ref... |
Description |
32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
184.10K /
12 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
M390S3253CTU
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OCR Text |
low profile registered dimm pin names * these pins are not used in this module. ** these pins should be nc in the system which d...latency (access from column address) burst length (1, 2, 4, 8 & full page) data scramble (s... |
Description |
32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD. Low Profile Registered DIMM Data Sheet
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File Size |
186.90K /
12 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
K4S510732C
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OCR Text |
... going edge of the clk with ras low. enables row access & precharge. cas column address strobe latches column addresses on the positive goin...latency=3 2 ea 4 cas latency=2 1
k4s510732c cmos sdram rev. 0.1 sept.2001 1. parameters depend on ... |
Description |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
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File Size |
66.59K /
9 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
K4S510632C K4S510632C-TC7C
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OCR Text |
... going edge of the clk with ras low. enables row access & precharge. cas column address strobe latches column addresses on the positive goin...latency=3 2 ea 4 cas latency=2 1
k4s510632c cmos sdram rev.0.1 sept.2001 1. parameters depend on p... |
Description |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
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File Size |
66.69K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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