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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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Part No. |
QM30E3Y-2H QM30E2Y-2H QM30E2Y
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Description |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE insulated TYPE MEDIUM POWER SWITCHING USE insulated TYPE 中功率开关使用绝缘型
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File Size |
89.16K /
6 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM75E3Y-H QM75E2Y-H
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Description |
HIGH POWER SWITCHING USE insulated TYPE 大功率开关使用绝缘型 MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE insulated TYPE
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File Size |
88.87K /
6 Page |
View
it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA insulated Gate Bipolar Transistor Silicon N Channel IGBT
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File Size |
139.45K /
5 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
MGW12N120
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Description |
insulated Gate Bipolar Transistor N-Channel insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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File Size |
133.06K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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