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For grown Found Datasheets File :: 232    Search Time::1.093ms    
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    QL63F5SA

List of Unclassifed Manufacturers
ETC
Part No. QL63F5SA
OCR Text grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for optoelectronic devices such as Optical Leveler and Modules. APPLICATION - Optical Leveler...
Description InGaAlP Laser Diode

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    MOTOROLA[Motorola, Inc]
Part No. AN211A
OCR Text ...onto which an n-type channel is grown epitaxially. A p-type gate is then diffused into the n-type epitaxial channel. Contact metallization completes the structure. The substrate, which functions as Gate 2 of Figure 1, is of relatively low r...
Description FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE

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    CEL[California Eastern Labs]
Part No. GET-30704
OCR Text ... (1) An optimal epitaxial layer grown by VPE(Vapour Phased Epitaxy). (2) Oxide isolation to reduce parasitic capacitance. (3) A shallow and higher impurity doped base by ion implantation. A shallow emitter by diffusion from As-doped polysil...
Description Qualification Test Results on Si MMIC

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    SKYWORKS[Skyworks Solutions Inc.]
Part No. GMV9822-000 GMV7811 GMV7811-000 GMV7821 GMV7821-000 GMV9801 GMV9801-000 GMV9821 GMV9821-000 GMV9822
OCR Text ...s. Varactors in this series are grown by MBE (Molecular Beam Epitaxy), which allows monolayer control of the doping profile.This translates to superb waferto-wafer uniformity. The series resistance is lower, and Q is higher when compared to...
Description GaAs Hyperabrupt Junction Varactor Diodes

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    HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. HFCT-5905E HFCT-5905 HFBR-0561
OCR Text ...e receiver section uses a MOVPE grown planar PIN photodetector for low dark current and excellent responsivity. A pseudo-ECL logic interface simplifies interface to external circuitry. Features * MT-RJ duplex single mode transceiver * In...
Description Agilent HFCT-5905E MT-RJ Duplex Single Mode Transceiver
Agilent HFCT-5905E MT-RJ Duplex Single Mode Transceiver
HFBR-0561 · Evaluation Kit for MT-RJ 155 Mb/s Multimode and Singlemode ATM Applications
HFCT-5905E · 155 Mbit/s SMF (15km) SFF Transceiver for SONET/SDH, ATM (OC-3)

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    Agilent(Hewlett-Packard...
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Avago Technologies, Ltd.
Part No. HMPP-389X HMPP-3890-BLK HMPP-3890-TR1 HMPP-3890-TR2 HMPP-3892-BLK HMPP-3892-TR1 HMPP-3892-TR2 HMPP-3895-BLK HMPP-3895-TR1 HMPP-3895-TR2 HMPP-389T-BLK HMPP-389T-TR1 HMPP-389T-TR2 DEMO-HMPP-38X0 DEMO-HMPP-389T HMPP-389T
OCR Text ...), onto which a thin I layer is grown. After the epitaxial growth, diffusion is used to add a heavily doped (N or P) layer on the top of the epi, creating a diode with a very thin I layer populated by a relatively large number of imperfecti...
Description HMPP-389T · MiniPak PIN switch diode
HMPP-3895 · MiniPak PIN switch diode
HMPP-3892 · MiniPak PIN switch diode
HMPP-3890 · MiniPak PIN switch diode
DEMO-HMPP-389T · Demonstration circuit board for HMPP-389T
DEMO-HMPP-38X0 · Demonstration circuit board for the HMPP-3860 and HMPP-3890
MiniPak Surface Mount RF PIN Switch Diodes MiniPak表面贴装射频PIN开关二极管
MiniPak PIN switch diode MiniPak PIN开关二极管

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    PD23-02

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. PD23-02
OCR Text ...r and the AlGaAsSb "window" are grown on GaSb substrates. *Photodiodes PD23-02 are mounted in standard 5.4 mm package TO-18. They have the photosensitive area with diameter of 200 m. Fast response makes possible their use for the detection ...
Description From old datasheet system
PHOTO DIODES 2.4;3.6 UM 光电二极2.4; 3.6密歇根大

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    QAL-785-04-F-18-3 QAL-785-04-F-18 QAL-785-04-F-18-1 QAL-785-04-F-18-2

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. QAL-785-04-F-18-3 QAL-785-04-F-18 QAL-785-04-F-18-1 QAL-785-04-F-18-2
OCR Text grown 780nm band AIGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for industrial optical module and sensor applications. [ FEATURES ] - Visible Light Output : p = ...
Description AIGaAs Laser Diode AIGaAs激光二极管
From old datasheet system

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. S1A0905-S0B0 S1A0905
OCR Text ...r or traffic(jams). But RDS has grown out to one big channel of information. Radiostations send their name, the time (with DCF-77 accuracy), their type of music (format) and even more. The digital data of RDS are multiplexed into an FM radi...
Description    RDS DEMODULATOR IC
SR16 Series Cost Effective Digital Vane Sensor; Hall-effect technology; twin tower configuration; sinking output; 3.8 to 30 Vdc supply voltage

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    SC50004450 SC10002430 SC00380912 SC00560912 SC33303440 SC01001518 SC06801518 SC00820710 SC00821518 SC01000710 SC04701518

Skyworks Solutions Inc.
Part No. SC50004450 SC10002430 SC00380912 SC00560912 SC33303440 SC01001518 SC06801518 SC00820710 SC00821518 SC01000710 SC04701518 SC02201518 SC00120912 SC03301518 SC00080912 SC00180912 SC01000912
OCR Text ...ielectric composed of thermally grown silicon dioxide over which a layer of silicon nitride is deposited. This dielectric possesses a low temperature coefficient of capacitance and very high insulation resistance. The devices also exhibit e...
Description MIS Chip Capacitors

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