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For glass Found Datasheets File :: 31236    Search Time::1.843ms    
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    BZD27 BZD27-C10 BZD27-C100 BZD27-C11 BZD27-C110 BZD27-C12 BZD27-C120 BZD27-C13 BZD27-C130 BZD27-C15 BZD27-C150 BZD27-C16

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. BZD27 BZD27-C10 BZD27-C100 BZD27-C11 BZD27-C110 BZD27-C12 BZD27-C120 BZD27-C13 BZD27-C130 BZD27-C15 BZD27-C150 BZD27-C16 BZD27-C160 BZD27-C18 BZD27-C180 BZD27-C20 BZD27-C200 BZD27-C22 BZD27-C220 BZD27-C24 BZD27-C240 BZD27-C27 BZD27-C270 BZD27-C30 BZD27-C300 BZD27-C33 BZD27-C330 BZD27-C36 BZD27-C360 BZD27-C39 BZD27-C390 BZD27-C3V6 BZD27-C3V9 BZD27-C43 BZD27-C430 BZD27-C47 BZD27-C470 BZD27-C4V3 BZD27-C4V7 BZD27-C51 BZD27-C510 BZD27-C56 BZD27-C5V1 BZD27-C5V6 BZD27-C62 BZD27-C68 BZD27-C6V2 BZD27-C6V8 BZD27-C75 BZD27-C7V5 BZD27-C82 BZD27-C8V2 BZD27-C91 BZD27-C9V1 BZD27_2 BZD27-C5V6/T1 BZD27-C75/T3 BZD27-C15/T3 BZD27-C18/T3 BZD27-C33/T1 BZD27-C200/T1 BZD27-C36/T1 BZD27C12 BZD27-C3V6T/R
OCR Text ...ge regulator diodes FEATURES * glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Zener working voltage range: 3.6 to 270 V for 46 types * Transient suppressor stand-off voltage range: 6.2 t...
Description From old datasheet system
DIODE ZENER 5V6
Positive voltage regulators
5.0 AMP POSITIVE VOLTAGE REGULATOR
Voltage regulator diodes 5.1 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Voltage regulator diodes 6.8 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Voltage regulator diodes 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
12 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

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Part No. 186PC05DT
OCR Text ...adhesive, silicon, borosilicate glass, and silicon-to- glass bond * p2 port absolute only: factory sealed vacuum reference, no connection p1 port dry gases only * liquid media containing some highly ionic solutions could potentially neutral...
Description DIFFERENTIAL, STRAIN GUAGE PRESSURE SENSOR, 0-5Psi, 3.50-6V, RECTANGULAR, THROUGH HOLE MOUNT

File Size 439.56K  /  5 Page

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    TOSHIBA
Part No. TPN8R903NL
OCR Text ...ty. note 3: device mounted on a glass-epoxy board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = 24 v, t ch = 25 (initial), l = 42 h, i ar = 20 a fig. fig. fig. fig. 5.1 5.1 5.1 5.1 ...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 236.14K  /  9 Page

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    Vishay Semiconductors
Part No. BYT42D-TR BYT42G-TR
OCR Text ...ures miniature axial leaded glass passivated hermetically sealed glass envelope low reverse current high reverse voltage applications tv and monitor smps electronic ballast 95 10526 absolute maximum ratings t j = 25 c parame...
Description DIODE 1.25 A, 200 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, MINIATURE, glass, DOT30B, 2 PIN, Rectifier Diode
DIODE 1.25 A, 400 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, MINIATURE, glass, DOT30B, 2 PIN, Rectifier Diode

File Size 102.49K  /  6 Page

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    Vishay Semiconductors
Part No. BYT42A
OCR Text ...ures miniature axial leaded glass passivated hermetically sealed glass envelope low reverse current high reverse voltage applications tv and monitor smps electronic ballast 95 10526 absolute maximum ratings t j = 25 c parame...
Description DIODE 1.25 A, 50 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, glass, MINIATURE, DOT30B, 2 PIN, Rectifier Diode

File Size 84.26K  /  6 Page

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    TPC8082

Toshiba Semiconductor
Part No. TPC8082
OCR Text ... . note 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = 24 v, t ch = 25 (initial), l = 1.0 mh, r g = 1 ? , i ar = 18 a fig. fig. fig. fig. 5.1...
Description MOSFETs

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    TOSHIBA
Part No. TPH6R003NL
OCR Text ...ty. note 3: device mounted on a glass-epoxy board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = 24 v, t ch = 25 (initial), l = 16 h, i ar = 38 a fig. fig. fig. fig. 5.1 5.1 5.1 5.1 ...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 233.58K  /  9 Page

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    TOSHIBA
Part No. TPCC8138
OCR Text ... . note 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = -16 v, t ch = 25 (initial), l = 0.5 mh, r g = 25 ? , i ar = -18 a fig. fig. fig. fig. ...
Description Power MOSFET (P-ch single)

File Size 233.20K  /  9 Page

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    TOSHIBA
Part No. TPCC8137
OCR Text ... . note 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = -16 v, t ch = 25 (initial), l = 0.5 mh, r g = 25 ? , i ar = -13 a fig. fig. fig. fig. ...
Description Power MOSFET (P-ch single)

File Size 231.43K  /  9 Page

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    TOSHIBA
Part No. TPCC8136
OCR Text ... . note 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = -16 v, t ch = 25 (initial), l = 0.5 mh, r g = 25 ? , i ar = -9.4 a fig. fig. fig. fig. ...
Description Power MOSFET (P-ch single)

File Size 232.53K  /  9 Page

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