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For energy Found Datasheets File :: 57907    Search Time::2.672ms    
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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...ime Fall Time Turn-On Switching energy Turn-Off Switching energy Total Switching energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...ime Fall Time Turn-On Switching energy Turn-Off Switching energy Total Switching energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...ime Fall Time Turn-On Switching energy Turn-Off Switching energy Total Switching energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...ime Fall Time Turn-On Switching energy Turn-Off Switching energy Total Switching energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    2SK4107

Toshiba Semiconductor
Part No. 2SK4107
OCR Text ...c = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously und...
Description Switching Regulator Applications

File Size 263.18K  /  6 Page

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    2SK3149

Hitachi Semiconductor
Part No. 2SK3149
OCR Text ...ent Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 20 20 60 20 20 40 50 150 -55 to +150 Unit V V A A A...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 51.30K  /  9 Page

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    FDP26N40 FDPF26N40

Fairchild Semiconductor
Part No. FDP26N40 FDPF26N40
OCR Text ...performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G GDS TO-220 FDP Series GD S ...
Description N-Channel MOSFET 400V, 26A, 0.16Ω
N-Channel MOSFET 400V, 26A, 0.16ヘ

File Size 545.46K  /  9 Page

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    FDP80N06

Fairchild Semiconductor
Part No. FDP80N06
OCR Text ...performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies,active power factor correction, electronic lamp ballast based on half bridge t...
Description N-Channel MOSFET

File Size 449.95K  /  8 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...he Current Repetitive Avalanche energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...he Current Repetitive Avalanche energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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Price and Availability




 
Price & Availability of energy
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LOC 01 HC BLUETOOTH LOW ENERGY
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Onlinecomponents.com

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CASE INT ENERGY COMPETENCE
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3: USD194.6
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100: USD64.92
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100: USD64.92
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5: USD76.12
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TTI

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H4TU0000
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100: USD1.09
500: USD1.05
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PWR5322W47R0JE
PWR5322W47R0JE
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3000: USD0.481
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10500: USD0.463
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AC03000004709JACCS
AC03000004709JACCS
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2500: USD0.187
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10000: USD0.177
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AC03000001009JACCS
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1000: USD0.192
1500: USD0.188
2500: USD0.185
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TME

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METRAHIT ENERGY DC POWER SET
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NAC

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Master Electronics

Part # Manufacturer Description Price BuyNow  Qty.
CASE INT ENERGY COMPETENCE
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Phoenix Contact 250: USD63.95
100: USD64.92
50: USD65.91
25: USD67.74
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Phoenix Contact 250: USD63.95
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Perfect Parts Corporation

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